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	Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors
	Yang, Ming; Lv, Yuanjie; Cui, Peng; Liu, Yan; Fu, Chen; Lin, Zhaojun
刊名	JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
	2018
卷号	123页码:223-227
关键词	AlGaN/GaN HFETs Polarization and strain distribution Polarization coulomb field scattering
DOI	10.1016/j.jpcs.2018.08.006
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4579226
专题	山东大学
作者单位	1.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.Heb
推荐引用方式 GB/T 7714	Yang, Ming,Lv, Yuanjie,Cui, Peng,et al. Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2018,123:223-227.
APA	Yang, Ming,Lv, Yuanjie,Cui, Peng,Liu, Yan,Fu, Chen,&Lin, Zhaojun.(2018).Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,123,223-227.
MLA	Yang, Ming,et al."Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 123(2018):223-227.

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