Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors | |
Yang, Ming; Lv, Yuanjie; Cui, Peng; Liu, Yan; Fu, Chen; Lin, Zhaojun | |
刊名 | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS |
2018 | |
卷号 | 123页码:223-227 |
关键词 | AlGaN/GaN HFETs Polarization and strain distribution Polarization coulomb field scattering |
DOI | 10.1016/j.jpcs.2018.08.006 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4579226 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.Heb |
推荐引用方式 GB/T 7714 | Yang, Ming,Lv, Yuanjie,Cui, Peng,et al. Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2018,123:223-227. |
APA | Yang, Ming,Lv, Yuanjie,Cui, Peng,Liu, Yan,Fu, Chen,&Lin, Zhaojun.(2018).Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,123,223-227. |
MLA | Yang, Ming,et al."Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 123(2018):223-227. |
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