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CORC

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Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2018, 卷号: 123, 页码: 223-227
作者:  Yang, Ming;  Lv, Yuanjie;  Cui, Peng;  Liu, Yan;  Fu, Chen
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9
作者:  Liu, Yan;  Lin, Zhao-Jun;  Lv, Yuan-Jie;  Cui, Peng;  Fu, Chen
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 12
作者:  Cui, Peng;  Lin, Zhao-Jun;  Fu, Chen;  Liu, Yan;  Lv, Yuan-Jie
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/11
Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 806-815
作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 110, 页码: 289-295
作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Influence of gate width on gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 65-72
作者:  Yang, Ming;  Ji, Qizheng;  Gao, Zhiliang;  Zhang, Shufeng;  Lin, Zhaojun
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/12
Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate 期刊论文
CHINESE PHYSICS B, 2016, 卷号: 25, 页码: -
作者:  Zhang, Jia-Qi;  Wang, Lei;  Li, Liu-An;  Wang, Qing-Peng;  Jiang, Ying
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/09
Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 10, 页码: 3908-3913
作者:  Yang, Ming;  Lv, Yuanjie;  Feng, Zhihong;  Lin, Wei;  Cui, Peng
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/16
Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 4, 页码: 1471-1477
作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Cui, Peng;  Fu, Chen
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/16
Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2016, 卷号: 100, 页码: 358-364
作者:  Cui, Peng;  Liu, Huan;  Lin, Zhaojun;  Cheng, Aijie;  Liu, Yan
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/17

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