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CORC

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Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by TaO/TaO Bi-Layer Structure. 期刊论文
Nanoscale research letters, 2019, 卷号: Vol.14 No.1, 页码: 111
作者:  Danian Dong;  Xiulong Wu;  Tiancheng Gong;  Ming Liu;  Hangbing Lv
收藏  |  浏览/下载：36/0  |  提交时间：2019/04/24
Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 4
作者:  Zhao, Xiaolong;  Zhang, Xumeng;  Shang, Dashan;  Wu, Zuheng;  Xiao, Xiangheng
收藏  |  浏览/下载：31/0  |  提交时间：2019/12/05
Recommended Methods to Study Resistive Switching Devices 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 1
作者:  Lanza, Mario;  Wong, H-S Philip;  Pop, Eric;  Ielmini, Daniele;  Strukov, Dimitri
收藏  |  浏览/下载：95/0  |  提交时间：2019/12/18
Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects 期刊论文
ADVANCED MATERIALS, 2018, 卷号: 30, 期号: 14
作者:  Zhao, Xiaolong;  Ma, Jun;  Xiao, Xiangheng;  Liu, Qi;  Shao, Lin
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/05
Negative differential resistance effect induced by metal ion implantation in SiO2film for multilevel RRAM application 期刊论文
Nanotechnology, 2018, 卷号: 29, 期号: 5
作者:  Wu, Facai;  Si, Shuyao;  Shi, Tuo;  Zhao, Xiaolong;  Liu, Qi
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/05
Characterization of the inhomogeneous barrier distribution in a Pt/(100) β -Ga2O3Schottky diode via its temperature-dependent electrical properties 期刊论文
AIP Advances, 2018, 卷号: 8, 期号: 1
作者:  Jian, Guangzhong;  He, Qiming;  Mu, Wenxiang;  Fu, Bo;  Dong, Hang
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Negative differential resistance effect induced by metal ion implantation in SiO2film for multilevel RRAM application 期刊论文
Nanotechnology, 2018, 卷号: 29, 期号: 5
作者:  Si, Shuyao;  Wu, Facai;  Liu, Ming;  Long, Shibing;  Lv, Hangbing
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05
Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application 期刊论文
NANOTECHNOLOGY, 2018, 卷号: 29, 期号: 5
作者:  Wu, Facai;  Si, Shuyao;  Shi, Tuo;  Zhao, Xiaolong;  Liu, Qi
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/05
A 0.13 mu m 64Mb HfOx ReRAM Using Configurable Ramped Voltage Write and Low Read-Disturb Sensing Techniques for Reliability Improvement 会议论文
作者:  Han, Xiaowei;  Jia, Qian;  Sun, Hongbin;  Wang, Longfei;  Wu, Huaqiang
收藏  |  浏览/下载：8/0  |  提交时间：2019/11/26
A 0.13μm 64Mb HfOxReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement 会议论文
作者:  Han, Xiaowei;  Jia, Qian;  Sun, Hongbin;  Wang, Longfei;  Wu, Huaqiang
收藏  |  浏览/下载：5/0  |  提交时间：2019/11/26

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