CORC

浏览/检索结果: 共7条,第1-7条 帮助

已选(0)清除 条数/页:   排序方式:
Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2022, 卷号: 14
作者:  Zhen, Weili;  Zhou, Xi;  Weng, Shirui;  Zhu, Wenka;  Zhang, Changjin
收藏  |  浏览/下载:11/0  |  提交时间:2022/12/23
An ultrasensitive molybdenum-based double-heterojunction phototransistor 期刊论文
NATURE COMMUNICATIONS, 2021, 卷号: 12, 期号: 1, 页码: 8
作者:  Feng, Shun;  Liu, Chi;  Zhu, Qianbing;  Su, Xin;  Qian, Wangwang
收藏  |  浏览/下载:43/0  |  提交时间:2021/10/15
N-Type 2D Organic Single Crystals for High-Performance Organic Field-Effect Transistors and Near-Infrared Phototransistors 期刊论文
ADVANCED MATERIALS, 2018, 卷号: 30, 期号: 16
作者:  Wang, Cong;  Ren, Xiaochen;  Xu, Chunhui;  Fu, Beibei;  Wang, Ruihao
收藏  |  浏览/下载:61/0  |  提交时间:2019/04/09
Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors 期刊论文
ADVANCED MATERIALS, 2017, 卷号: 29, 期号: 32
作者:  Fu, Lei;  Wang, Feng;  Wu, Bin;  Wu, Nian;  Huang, Wei
收藏  |  浏览/下载:20/0  |  提交时间:2018/06/15
Van der Waals Epitaxial Growth of Atomic Layered HfS2Crystals for Ultrasensitive Near-Infrared Phototransistors 期刊论文
Advanced Materials, 2017, 卷号: 29, 期号: 32
作者:  Fu, Lei;  Wang, Feng;  Wu, Bin;  Wu, Nian;  Huang, Wei
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/05
Van der Waals Epitaxial Growth of Atomic Layered HfS2Crystals for Ultrasensitive Near-Infrared Phototransistors 期刊论文
Advanced Materials, 2017, 卷号: 29, 期号: 32
作者:  Zhuang, Lin;  Wang, Hanlin;  Jin, Chuanhong;  Wu, Nian;  Wu, Bin
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/05
Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors 期刊论文
ADVANCED MATERIALS, 2017, 卷号: 29, 期号: 32
作者:  Fu, Lei;  Wang, Feng;  Wu, Bin;  Wu, Nian;  Huang, Wei
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/05


©版权所有 ©2017 CSpace - Powered by CSpace