Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors

	Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors
	Fu, Lei 1,2; Wang, Feng 3; Wu, Bin 1; Wu, Nian 2; Huang, Wei 4; Wang, Hanlin 1; Jin, Chuanhong 4; Zhuang, Lin 2; He, Jun 3; Fu, Lei 2
刊名	ADVANCED MATERIALS
	2017-08-25
卷号	29 期号:32
关键词	Hafnium Disulfide Crystals Near-infrared Transition Metal Dichalcogenides Ultrasensitive Phototransistors Van Der Waals Epitaxy
英文摘要	As a member of the group IVB transition metal dichalcogenides (TMDs) family, hafnium disulfide (HfS2) is recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high-quality HfS2 crystals, sparsely reported, has greatly hindered the development of this new field. Here, a facile strategy for controlled synthesis of high-quality atomic layered HfS2 crystals by van der Waals epitaxy is reported. Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S-edge and Hf-edge. Impressively, the HfS2 back-gate field-effect transistors display a competitive mobility of 7.6 cm(2) V-1 s(-1) and an ultrahigh on/off ratio exceeding 10(8). Meanwhile, ultrasensitive near-infrared phototransistors based on the HfS2 crystals (indirect bandgap approximate to 1.45 eV) exhibit an ultrahigh responsivity exceeding 3.08 x 10(5) A W-1, which is 10(9)-fold higher than 9 x 10(-5) A W-1 obtained from the multilayer MoS2 in near-infrared photo-detection. Moreover, an ultrahigh photogain exceeding 4.72 x 10(5) and an ultrahigh detectivity exceeding 4.01 x 10(12) Jones, superior to the vast majority of the reported 2D-materials-based phototransistors, imply a great promise in TMD-based 2D electronic and optoelectronic applications.
语种	英语
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/41062]
专题	化学研究所_有机固体实验室
作者单位	1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Wuhan Univ, Coll Chem & Mol Sci, Wuhan 430072, Hubei, Peoples R China 3.Natl Ctr Nanoscience & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China 4.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
推荐引用方式 GB/T 7714	Fu, Lei,Wang, Feng,Wu, Bin,et al. Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors[J]. ADVANCED MATERIALS,2017,29(32).
APA	Fu, Lei.,Wang, Feng.,Wu, Bin.,Wu, Nian.,Huang, Wei.,...&Liu, Yunqi.(2017).Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors.ADVANCED MATERIALS,29(32).
MLA	Fu, Lei,et al."Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors".ADVANCED MATERIALS 29.32(2017).