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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Threshold Voltage Shift Effect of a-Si:H TFTs Under Bipolar Pulse Bias 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Hu, Zhijin; Wang, Lisa Ling; Liao, Congwei; Zeng, Limei; Lee, Chang-Yeh; Lien, Alan; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Amorphous silicon  bipolar pulse bias stress (BPBS)  thin-film transistor (TFT)  threshold voltage shift (Delta V-TH)  unipolar pulse bias stress (UPBS)  THIN-FILM TRANSISTORS  HYDROGENATED AMORPHOUS-SILICON  INSTABILITY MECHANISMS  ELECTRIC-FIELDS  CONDUCTION  NITRIDE  STRESS  DEPENDENCE  MODEL   Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Hu, Zhijin; Liao, Congwei; Li, Wenjie; Zeng, Limei; Lee, Chang-Yeh; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Amorphous silicon (a-Si)  bipolar pulse  gate driver  lifetime  threshold voltage shift (Delta V-TH)  THIN-FILM TRANSISTORS  AMORPHOUS-SILICON TECHNOLOGY  LCD APPLICATION  DESIGN  CIRCUITS  STRESS   Thin-Film Transistor V-th Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric 期刊论文 ieee电子器件汇刊, 2014 Wang, Lisa Ling; Liu, Tony Chi; Cai, Yuying; Zhang, Shengdong 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/11 Charge trapping  electron transfer  Poole-Frenkel (PF) conduction  threshold voltage shift  trap-assisted tunnel  CONDUCTION  STABILITY   Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors 期刊论文 应用物理学快报, 2009 Yang, Jingfeng; Yang, Jiaqi; Yan, Baoguang; Du, Gang; Liu, Xiaoyan; Han, Ruqi; Kang, Jinfeng; Liao, C. C.; Gan, Z. H.; Liao, M.; Wang, J. P.; Wong, W. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 deep levels  dielectric materials  electron traps  insulated gate field effect transistors  interface states  reliability  silicon compounds  NBTI  GENERATION  IMPACT