Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under   Bipolar Pulses

doi:10.1109/TED.2015.2487836

CORC > 北京大学 > 信息科学技术学院

	Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses
	Hu, Zhijin ; Liao, Congwei ; Li, Wenjie ; Zeng, Limei ; Lee, Chang-Yeh ; Zhang, Shengdong
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2015
关键词	Amorphous silicon (a-Si) bipolar pulse gate driver lifetime threshold voltage shift (Delta V-TH) THIN-FILM TRANSISTORS AMORPHOUS-SILICON TECHNOLOGY LCD APPLICATION DESIGN CIRCUITS STRESS
DOI	10.1109/TED.2015.2487836
英文摘要	A hydrogenated amorphous silicon (a-Si: H) thin-film transistor (TFT) gate driver on array with low-level holding TFTs (LLH TFTs) biased under bipolar pulse is investigated. It is shown that the bipolar bias at low frequency significantly alleviates the threshold voltage shift of the LLH TFTs. As a result, the lifetime of the proposed gate driver is demonstrated to be several times of that under the conventional unipolar pulse bias. In addition, the improvement in the lifetime becomes more significant at the higher work temperature. The liquid crystal display television panels (32-in, 1366 x RGB x 768) with the proposed a-Si: H gate drivers integrated on array are manufactured, and the feasibility of the proposed driving scheme is well verified.; National Natural Science Foundation of China [61274084]; Shenzhen Municipal Scientific Program [JCYJ20120829170028552]; SCI(E); EI; ARTICLE; zjhu@pku.edu.cn; hustliao@126.com; livenjie@gmail.com; zenglimei@tcl.com; tedlee@tcl.com; zhangsd@pku.edu.cn; 12; 4044-4050; 62
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/435716]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Hu, Zhijin,Liao, Congwei,Li, Wenjie,et al. Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015.
APA	Hu, Zhijin,Liao, Congwei,Li, Wenjie,Zeng, Limei,Lee, Chang-Yeh,&Zhang, Shengdong.(2015).Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses.IEEE TRANSACTIONS ON ELECTRON DEVICES.
MLA	Hu, Zhijin,et al."Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses".IEEE TRANSACTIONS ON ELECTRON DEVICES (2015).