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浏览/检索结果: 共1条，第1-1条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications 期刊论文 ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900 作者:  Zhu, Tianhua;  Zhuo, Fang 收藏  |  浏览/下载：16/0  |  提交时间：2019/11/19 high-current applications  wire bonding  power density  avalanche-suppressed method  gallium compounds  GaN  integral package  lead bonding  single gate driver  field effect transistor switches  MOSFET  DHEMT integrated cascode switch  high electron mobility transistors  paralleled depletion-mode high-electron-mobility transistors  wide band gap semiconductors  cascode transistors  silicon-MOSFET  Si  potential unbalanced current sharing  cost reduction  optimised symmetric configuration  high-current cascode gallium nitride switch  III-V semiconductors  semiconductor device packaging