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	Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications
	Zhu, Tianhua; Zhuo, Fang
刊名	ELECTRONICS LETTERS
	2018
卷号	54页码:899-900
关键词	high-current applications wire bonding power density avalanche-suppressed method gallium compounds GaN integral package lead bonding single gate driver field effect transistor switches MOSFET DHEMT integrated cascode switch high electron mobility transistors paralleled depletion-mode high-electron-mobility transistors wide band gap semiconductors cascode transistors silicon-MOSFET Si potential unbalanced current sharing cost reduction optimised symmetric configuration high-current cascode gallium nitride switch III-V semiconductors semiconductor device packaging
ISSN号	0013-5194
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2832078
专题	西安交通大学
推荐引用方式 GB/T 7714	Zhu, Tianhua,Zhuo, Fang. Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications[J]. ELECTRONICS LETTERS,2018,54:899-900.
APA	Zhu, Tianhua,&Zhuo, Fang.(2018).Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications.ELECTRONICS LETTERS,54,899-900.
MLA	Zhu, Tianhua,et al."Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications".ELECTRONICS LETTERS 54(2018):899-900.

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