CORC

浏览/检索结果: 共121条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
A new model of competitive grain growth dominated by the solute field of the Nickel-based superalloys during directional solidification 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 873, 页码: 13
作者:  Wang, Haiwei;  Zhang, Xiaoli;  Meng, Jie;  Yang, Jinxia;  Yang, Yanhong
收藏  |  浏览/下载:72/0  |  提交时间:2021/10/15
Enhancing diamond NV center density in HPHT substrate and epitaxy lateral overgrowth layer by tungsten pattern 期刊论文
MATERIALS LETTERS, 2019, 卷号: 240, 页码: 233-237
作者:  Liu, Zongchen;  Fu, Jiao;  Liu, Zhangcheng;  Wang, Yanfeng;  Fan, Shuwei
收藏  |  浏览/下载:15/0  |  提交时间:2019/11/19
Lateral overgrowth of diamond film on stripes patterned Ir/HPHT-diamond substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 489, 页码: 51-56
作者:  Wang, Yan-Feng;  Chang, Xiaohui;  Liu, Zhangcheng;  Liu, Zongchen;  Fu, Jiao
收藏  |  浏览/下载:9/0  |  提交时间:2019/11/26
Fabrication of microchannels in single crystal diamond for microfluidic systems 期刊论文
MICROFLUIDICS AND NANOFLUIDICS, 2018, 卷号: 22
作者:  Fu, Jiao;  Liu, Zongchen;  Zhu, Tianfei;  Zhang, Minghui;  Zhang, Xiaofan
收藏  |  浏览/下载:5/0  |  提交时间:2019/11/26
Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth 期刊论文
CRYSTENGCOMM, 2018, 卷号: 20, 期号: 12, 页码: 1705-1710
作者:  Yang, Xianglong;  Chen, Xiufang;  Peng, Yan;  Hu, Xiaobo;  Xu, Xiangang
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/11
Fabrication of Low Dislocation Density, Single-Crystalline Diamond via Two-Step Epitaxial Lateral Overgrowth 期刊论文
CRYSTALS, 2017, 卷号: 7
作者:  Li, Fengnan;  Zhang, Jingwen;  Wang, Xiaoliang;  Zhang, Minghui;  Wang, Hongxing
收藏  |  浏览/下载:6/0  |  提交时间:2019/11/26
Single-step-grown transversely coupled distributed feedback laser 专利
专利号: US9350138, 申请日期: 2016-05-24, 公开日期: 2016-05-24
作者:  GUBENKO, ALEXEY;  LIVSHITS, DANIIL;  MIKHRIN, SERGEY;  KRESTNIKOV, IGOR
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/24
The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 卷号: 31, 期号: 6
作者:  Jahn, U;  Musolino, M;  Lahnemann, J;  Dogan, P;  Garrido, SF
收藏  |  浏览/下载:14/0  |  提交时间:2017/03/11
Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 3
作者:  Jiang, T;  Xu, SR;  Zhang, JC;  Li, PX;  Huang, J(黄俊)
收藏  |  浏览/下载:21/0  |  提交时间:2017/03/11
Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission 期刊论文
ieee photonics journal, 2016, 卷号: 8, 期号: 5, 页码: 2300211
Xiang Chen; Jianchang Yan; Yun Zhang; Yingdong Tian; Yanan Guo; Shuo Zhang; Tongbo Wei; Junxi Wang; Jin Min Li
收藏  |  浏览/下载:22/0  |  提交时间:2017/03/16


©版权所有 ©2017 CSpace - Powered by CSpace