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	Enhancing diamond NV center density in HPHT substrate and epitaxy lateral overgrowth layer by tungsten pattern
	Liu, Zongchen; Fu, Jiao; Liu, Zhangcheng; Wang, Yanfeng; Fan, Shuwei; Wen, Feng; Wang, Wei; Wang, Kaiyue; Ahmed, Irfan; Wang, Hong-Xing
刊名	MATERIALS LETTERS
	2019
卷号	240页码:233-237
关键词	Epitaxial growth Crystal growth Luminescence Carbon materials Defects
ISSN号	0167-577X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2827329
专题	西安交通大学
推荐引用方式 GB/T 7714	Liu, Zongchen,Fu, Jiao,Liu, Zhangcheng,et al. Enhancing diamond NV center density in HPHT substrate and epitaxy lateral overgrowth layer by tungsten pattern[J]. MATERIALS LETTERS,2019,240:233-237.
APA	Liu, Zongchen.,Fu, Jiao.,Liu, Zhangcheng.,Wang, Yanfeng.,Fan, Shuwei.,...&Wang, Hong-Xing.(2019).Enhancing diamond NV center density in HPHT substrate and epitaxy lateral overgrowth layer by tungsten pattern.MATERIALS LETTERS,240,233-237.
MLA	Liu, Zongchen,et al."Enhancing diamond NV center density in HPHT substrate and epitaxy lateral overgrowth layer by tungsten pattern".MATERIALS LETTERS 240(2019):233-237.

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