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半导体研究所 [14]
长春应用化学研究所 [2]
大连化学物理研究所 [1]
武汉大学 [1]
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期刊论文 [16]
会议论文 [2]
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Negative differential resistance in graphene nanoribbon superlattice field-effect transistors
期刊论文
MICRO & NANO LETTERS, 2015, 卷号: 10, 期号: 8
作者:
Chang, Sheng
;
Zhao, Lei
;
Lv, Yawei
;
Wang, Hao
;
Huang, Qijun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/05
graphene
superlattices
nanoribbons
field effect transistors
ab initio calculations
negative differential resistance
graphene nanoribbon superlattice field-effect transistors
two-terminal nanoscale graphene structures
numerical analysis
gate voltages
Z-type GNSL FET
transmission coefficient
ab-initio calculations
energy levels
gate control effect
energy-level localisation
heterojunction-like explanation
semiconductor device
C
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability
期刊论文
journal of the american chemical society, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
作者:
Liu J
;
Tan PH
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浏览/下载:90/4
  |  
提交时间:2011/07/05
FERRIC-CHLORIDE
CHARGE-TRANSFER
SINGLE-LAYER
GRAPHENE
SPECTROSCOPY
SCATTERING
SPECTRA
A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure
期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 786-789
作者:
Jin P
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  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
DELTA-DOPED GAAS
FRANZ-KELDYSH OSCILLATIONS
BUILT-IN FIELD
FERMI-LEVEL
PHOTOREFLECTANCE
SURFACE
SPECTROSCOPY
Electron irradiation-induced defects in InP pre-annealed at high temperature
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.)
;
Dong ZY (Dong Z. Y.)
;
Deng AH (Deng A. H.)
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  |  
浏览/下载:42/0
  |  
提交时间:2010/04/11
indium phosphide
defect
irradiation
THERMALLY STIMULATED CURRENT
UNDOPED SEMIINSULATING INP
DEEP-LEVEL DEFECTS
FRENKEL PAIRS
FE
SPECTROSCOPY
PHOSPHIDE
AMBIENT
TRAPS
Spin-polarized current produced by a double barrier resonant tunneling diode
期刊论文
solid state communications, 2003, 卷号: 127, 期号: 7, 页码: 489-492
Xia JB
;
Hai GQ
;
Wang JN
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  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
semiconductor
semimagnetic
spin
tunneling
SEMICONDUCTOR HETEROSTRUCTURE
INJECTION
Hydrogenated amorphous silicon films with significantly improved stability
期刊论文
solar energy materials and solar cells, 2001, 卷号: 68, 期号: 1, 页码: 123-133
Sheng SR
;
Liao XB
;
Ma ZX
;
Yue GZ
;
Wang YQ
;
Kong GL
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  |  
浏览/下载:50/0
  |  
提交时间:2010/08/12
amorphous silicon
stability
A-SI-H
CONSTANT PHOTOCURRENT METHOD
PERSISTENT PHOTOCONDUCTIVITY
URBACH EDGE
SOLAR-CELLS
GAP STATES
ABSORPTION
DENSITY
SPECTROSCOPY
INCREASE
Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots
期刊论文
physical review b, 2000, 卷号: 61, 期号: 8, 页码: 5530-5534
Wang HL
;
Yang FH
;
Feng SL
;
Zhu HJ
;
Ning D
;
Wang H
;
Wang XD
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/08/12
ELECTRONIC-STRUCTURE
CARRIER RELAXATION
ENERGY-LEVELS
SPECTROSCOPY
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
期刊论文
compound semiconductors 1999, 2000, 期号: 166, 页码: 251-256
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/08/12
ELECTRONIC-STRUCTURE
CARRIER RELAXATION
ENERGY-LEVELS
SPECTROSCOPY
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
会议论文
26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
ELECTRONIC-STRUCTURE
CARRIER RELAXATION
ENERGY-LEVELS
SPECTROSCOPY
Electronic characteristics of InAs self-assembled quantum dots
会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
InAs/GaAs quantum dots
self-assembled structure
DLTS
PL
band offset
ENERGY-LEVELS
CARRIER RELAXATION
SPECTROSCOPY
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