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CORC

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CrI3/Y2CH2Heterointerface-Induced Stable Half-Metallicity of Two-Dimensional CrI3Monolayer Ferromagnets 期刊论文
ACS Applied Materials and Interfaces, 2021, 卷号: 13, 期号: 14, 页码: 16694-16703
作者:  G. Wang;  W. Qin;  S. Wang;  B. S. Teketel;  W. Yu
收藏  |  浏览/下载：3/0  |  提交时间：2022/06/13
Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172
作者:  Chen, Xiaoming;  Niemier, Michael;  Hu, Xiaobo Sharon;  Yin, Xunzhao
收藏  |  浏览/下载：70/0  |  提交时间：2019/04/03
Recent advances in Sb-based III-V nanowires 期刊论文
NANOTECHNOLOGY, 2019, 卷号: 30, 期号: 21
作者:  Gao, Zhaofeng;  Sun, Jiamin;  Han, Mingming;  Yin, Yanxue;  Gu, Yu
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/11
Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors 期刊论文
Advanced Electronic Materials, 2019, 卷号: Vol.5 No.1
作者:  Yawei Lv;  Wenjing Qin;  Chunlan Wang;  Lei Liao;  Xingqiang Liu
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/13
Recent Advances in Low-Dimensional Heterojunction-Based Tunnel Field Effect Transistors 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: Vol.5 No.1
作者:  Lv, YW;  Qin, WJ;  Wang, CL;  Liao, L;  Liu, XQ
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/17
Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 卷号: 20, 期号: 8, 页码: 5699-5707
作者:  Juan Lu;   Zhi-Qiang Fan;   Jian Gong;   Jie-Zhi Chen;   Huhe ManduLa;   Yan-Yang Zhang;   Shen-Yuan Yang Xiang-Wei Jiang
收藏  |  浏览/下载：15/0  |  提交时间：2019/11/18
A full-range analytical current model for heterojunction TFET with dual material gate 期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 5213-5217
作者:  Guan, Yunhe;  Li, Zunchao;  Zhang, Wenhao;  Zhang, Yefei;  Liang, Feng
收藏  |  浏览/下载：13/0  |  提交时间：2019/11/19
Comparison of the performance improvement for the two novel SOI-tunnel FETs with the lateral dual-gate and triple-gate 期刊论文
Microsystem Technologies, 2018
作者:  Wei, Sufen;  Zhang, Guohe;  Geng, Li;  Shao, Zhibiao;  Yang, Cheng-Fu
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/26
Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 卷号: 20, 期号: 8, 页码: 5699-5707
作者:  Lu, Juan;  Fan, Zhi-Qiang;  Gong, Jian;  Chen, Jie-Zhi;  ManduLa, Huhe
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11
Impact of the Gate Structure on ESD Characteristic of Tunnel Field-Effect Transistors 会议论文
2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2018-01-01
作者:  Yang, Zhaonian;  Yu, Ningmei;  Liou, Juin J.
收藏  |  浏览/下载：24/0  |  提交时间：2019/12/20

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