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Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382
作者:  Cui, X (Cui, Xu) [1] , [2] , [3];  Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3];  Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3];  Wei, Y (Wei, Ying) [1] , [2] , [3];  Li, YD (Li, Yu-Dong) [1] , [2] , [3]
收藏  |  浏览/下载:18/0  |  提交时间:2022/06/21
New Thermonuclear Rate of Li-7(d,n)2(4)He Relevant to the Cosmological Lithium Problem 期刊论文
ASTROPHYSICAL JOURNAL, 2021, 卷号: 920, 期号: 2, 页码: 10
作者:  Hou, S. Q.;  Kajino, T.;  Trueman, T. C. L.;  Pignatari, M.;  Luo, Y. D.
收藏  |  浏览/下载:23/0  |  提交时间:2021/12/08
New Thermonuclear Rate of 7Li(d,n)24He Relevant to the Cosmological Lithium Problem 期刊论文
The Astrophysical Journal, 2021, 卷号: 920, 期号: 2
作者:  Hou,S. Q.;  Kajino,T.;  Trueman,T. C. L.;  Pignatari,M.;  Luo,Y. D.
收藏  |  浏览/下载:18/0  |  提交时间:2021/12/08
A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design 会议论文
Guilin, China, June 4-6, 2021
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Xie C(谢闯);  Yang ZJ(杨志家)
收藏  |  浏览/下载:11/0  |  提交时间:2022/02/04
Lower recognition thresholds for sad facial expressions in subthreshold depression: a longitudinal study 期刊论文
PSYCHIATRY RESEARCH, 2020, 卷号: 294, 页码: 7
作者:  Mei, Gaoxing;  Li, Yufeng;  Chen, Shiyu;  Cen, Mofen;  Bao, Min
收藏  |  浏览/下载:27/0  |  提交时间:2021/03/01
Constraining the External Capture to the O-16 Ground State and the E2 S Factor of the C-12(alpha,gamma)O-16 Reaction 期刊论文
PHYSICAL REVIEW LETTERS, 2020, 卷号: 124, 期号: 16, 页码: 6
作者:  Shen, Y. P.;  Guo, B.;  deBoer, R. J.;  Li, Z. H.;  Li, Y. J.
收藏  |  浏览/下载:11/0  |  提交时间:2022/01/18
Energy estimation and coupling synchronization between biophysical neurons 期刊论文
Science China Technological Sciences, 2020, 卷号: 63, 期号: 4, 页码: 625-636
作者:  Wu, FuQiang;  Ma, Jun;  Zhang, Ge
收藏  |  浏览/下载:3/0  |  提交时间:2020/11/14
First-principles investigations on MXene-blue phosphorene and MXene-MoS(2)transistors 期刊论文
NANOTECHNOLOGY, 2020, 卷号: 31, 期号: 39
作者:  Zhou, Yuhong;  Zhuge, Xia;  An, Peng;  Du, Shiyu
收藏  |  浏览/下载:10/0  |  提交时间:2020/12/16
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载:15/0  |  提交时间:2020/07/11
Analytic Compact Model of Short-channel Cylindrical ballistic GAA MOSFET Including SDT effect 会议论文
Zhangjiajie, China, April 24-26, 2020
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Yang ZJ(杨志家);  Zhang ZP(张志鹏)
收藏  |  浏览/下载:7/0  |  提交时间:2020/08/01


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