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1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy 期刊论文
THIN SOLID FILMS, 2020, 卷号: 709, 期号: 9, 页码: 1-5
作者:  Sailai, M (Sailai, Momin)[ 1 ];  Lei, QQ (Lei, Qi Qi)[ 1,2 ];  Aierken, A (Aierken, Abuduwayiti)[ 1,3 ];  Heini, M (Heini, Maliya)[ 1,4 ];  Zhao, XF (Zhao, Xiao Fan)[ 1 ]
收藏  |  浏览/下载：29/0  |  提交时间：2020/10/23
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si 期刊论文
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:  Sun, Y.;  Zhou, K.;  Feng, M. X.;  Li, Z. C.;  Zhou, Y.
收藏  |  浏览/下载：5/0  |  提交时间：2019/09/17
Dioda laserowa na bazie stopu AllnGaN 专利
专利号: PL228535B1, 申请日期: 2017-11-06, 公开日期: 2018-04-30
作者:  STAŃCZYK SZYMON;  KAFAR ANNA;  CZERNECKI ROBERT;  SUSKI TADEUSZ;  PERLIN PIOTR
收藏  |  浏览/下载：14/0  |  提交时间：2019/12/26
Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting. 期刊论文
Journal of Alloys & Compounds, 2017, 卷号: Vol.706, 页码: 629-636
作者:  Ganesh, V;  Alizadeh, M;  Shuhaimi, A;  Adreen, A;  Pandikumar, A
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/31
Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 卷号: 372, 页码: 29-37
作者:  Hu, P. P.;  Liu, J.;  Zhang, S. X.;  Maaz, K.;  Zeng, J.
收藏  |  浏览/下载：29/0  |  提交时间：2018/05/31
Influence of in content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes (EI收录) 期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49
作者:  Lin, Zhiting[1,2];  Wang, Haiyan[1,2];  Lin, Yunhao[1,2];  Yang, Meijuan[1,2];  Wang, Wenliang[1,2]
收藏  |  浏览/下载：13/0  |  提交时间：2019/04/24
Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN (EI收录) 期刊论文
Nanoscale Research Letters, 2015, 卷号: 10
作者:  Hu, Xiao-Long[1];  Wang, Hong[1];  Zhang, Xi-Chun[1]
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/25
Characterization of InGaN by Means of I-V Measurements of Respective Light-Emitting Diode (LED) by DLTS 期刊论文
ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING, 2015, 卷号: 40, 页码: 263-268
作者:  Asghar, H. M. Noor ul Huda Khan;  Gilani, Zaheer Abbas;  Awan, M. S.;  Ahmad, I.;  Tan, Yi
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/09
纳米压印技术制备表面二维光子晶体发光二极管 期刊论文
2014
陈志远; 刘宝林; 朱丽虹; 樊海涛; 曾凡明; 林飞
收藏  |  浏览/下载：5/0  |  提交时间：2016/05/17
Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission 期刊论文
http://dx.doi.org/10.1063/1.4863208, 2014
Fang, Z. L.; Li, Q. F.; Shen, X. Y.; Xiong, H.; Cai, J. F.; Kang, J. Y.; Shen, W. Z.; 康俊勇
收藏  |  浏览/下载：2/0  |  提交时间：2015/07/22

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