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科研机构
北京大学 [35]
清华大学 [3]
新疆理化技术研究所 [2]
合肥物质科学研究院 [1]
内容类型
期刊论文 [28]
其他 [13]
发表日期
2023 [1]
2016 [2]
2015 [6]
2014 [4]
2013 [4]
2012 [1]
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Physics [1]
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浏览/检索结果:
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Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs
期刊论文
MICROELECTRONICS RELIABILITY, 2023, 卷号: 149
作者:
Yu, Cheng-hao
;
Guo, Hao-min
;
Liu, Yan
;
Wu, Xiao-dong
;
Zhang, Li-long
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2023/11/10
Depletion-mode
Single-event burnout (SEB)
Single-event gate rupture
GIDL Challenge of GAA SNWT For Low Power Application
其他
2016-01-01
Ming Li
;
Jiewen Fan
;
Yuancheng Yang
;
Gong Chen
;
Ru Huang
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2017/12/03
drain
transistor
junction
overcome
suppressed
extremely
modulated
leakage
overlap
TCAD
drain
transistor
junction
overcome
suppressed
extremely
modulated
leakage
overlap
TCAD
Resistive-Gate Field-Effect Transistor Exhibiting Steep Subthreshold Slope of 5mV /dec and High I_(ON)/I_(OFF) Ratio
其他
2016-01-01
Qianqian Huang
;
Zongwei Wang
;
Yue Pan
;
Yangyuan Wang
;
Ru Huang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
resistive
electrically
drain
steep
OFF
ON
Ratio
dec and High I
transistor
operated
resistive
electrically
drain
steep
OFF
ON
Ratio
dec and High I
transistor
operated
Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors
期刊论文
ieee电子器件汇刊, 2015
Fan, Jiewen
;
Li, Ming
;
Xu, Xiaoyan
;
Yang, Yuancheng
;
Xuan, Haoran
;
Huang, Ru
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/10
Band-to-band tunneling (BTBT)
CMOS technology
gate-induced drain leakage (GIDL)
power consumption
silicon nanowire transistors (SNWTs)
CMOS TECHNOLOGY
MOSFET
GIDL
DEVICES
DESIGN
Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio
期刊论文
acs nano, 2015
Qiu, Chenguang
;
Zhang, Zhiyong
;
Zhong, Donglai
;
Si, Jia
;
Yang, Yingjun
;
Peng, Lan-Mao
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/11
HIGH-PERFORMANCE ELECTRONICS
TO-UNIPOLAR CONVERSION
INTEGRATED-CIRCUITS
THRESHOLD VOLTAGE
CMOS DEVICES
ARRAYS
FABRICATION
DEPOSITION
TRANSPORT
MOBILITY
Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices
期刊论文
半导体学报(英文版), 2015
Wu Weikang
;
An Xia
;
Tan Fei
;
Feng Hui
;
Chen Yehua
;
Liu Jingjing
;
Zhang Xing
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
heavy ion displacement damages PDSOI performance degradation
heavy ion
displacement damages
PDSOI
performance degradation
Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices
期刊论文
半导体学报(英文版), 2015
Chen Yehua
;
An Xia
;
Wu Weikang
;
Zhang Yao
;
Liu Jingjing
;
Zhang Xing
;
Huang Ru
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
heavy ion displacement damage bulk silicon
heavy ion
displacement damage
bulk silicon
Comparative study of silicon nanowire transistors with triangular-shaped cross sections
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015
Zhang, Yi-Bo
;
Sun, Lei
;
Xu, Hao
;
Han, Jing-Wen
;
Wang, Yi
;
Zhang, Sheng-Dong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
SCHOTTKY-BARRIER SOURCE/DRAIN
MOSFET
PERFORMANCE
SIMULATION
FINFETS
LEAKAGE
Comparative study of silicon nanowire transistors with triangular-shaped cross sections
其他
2015-01-01
Zhang, Yi-Bo
;
Sun, Lei
;
Xu, Hao
;
Han, Jing-Wen
;
Wang, Yi
;
Zhang, Sheng-Dong
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/04
SCHOTTKY-BARRIER SOURCE/DRAIN
MOSFET
PERFORMANCE
SIMULATION
FINFETS
LEAKAGE
Impact of random discrete dopant in extension induced fluctuation in gate-source/drain underlap FinFET
期刊论文
日本应用物理学杂志, 2014
Wang, Yijiao
;
Huang, Peng
;
Xin, Zheng
;
Zeng, Lang
;
Liu, Xiaoyan
;
Du, Gang
;
Kang, Jinfeng
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2015/11/10
DRIFT-DIFFUSION SIMULATIONS
K SPACER
OPTIMIZATION
PERFORMANCE
DESIGN
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