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浏览/检索结果: 共10条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Interfacial graphene modulated energetic behavior of the point-defect at the Au/HfO2 interface 期刊论文 APPLIED SURFACE SCIENCE, 2019, 卷号: 489, 页码: 608-613 作者:  Zhu, Linggang;  Zhang, Xuanyu;  Zhou, Jian;  Sun, Zhimei 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/30 Graphene  Interface  Resistive random access memory  First-principles calculation   The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer 期刊论文 MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 期号: 9, 页码: 1-5 作者:  Xu, YN (Xu, Yannan)[ 1,2 ];  Bi, JS (Bi, Jinshun)[ 1,2 ];  Li, YD (Li, Yudong)[ 3 ];  Xi, K (Xi, Kai)[ 1 ];  Fan, LJ (Fan, Linjie)[ 4 ] 收藏  |  浏览/下载：9/0  |  提交时间：2020/01/19 Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition 期刊论文 Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10 作者:  L.Wang;  L.Chen;  S.L.Wong;  X.Huang;  W.G.Liao 收藏  |  浏览/下载：0/0  |  提交时间：2020/08/24 chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics   Probing nanoscale oxygen ion motion in memristive systems 期刊论文 NATURE COMMUNICATIONS, 2017 Yang, Yuchao; Zhang, Xiaoxian; Qin, Liang; Zeng, Qibin; Qiu, Xiaohui; Huang, Ru 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 RESISTIVE SWITCHING MEMORIES  IN-SITU OBSERVATION  FORCE MICROSCOPY  GRAPHENE  DEVICES  OXIDE  NANOFILAMENT  FILAMENTARY  SRTIO3  LAYER   Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2017 Xiao, Mengmeng; Qiu, Chenguang; Zhang, Zhiyong; Peng, Lian-Mao 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 atomic layer deposition  HfO2 graphene  high k  gate insulator  FIELD-EFFECT TRANSISTORS  GATE DIELECTRICS  CARBON NANOTUBES  METAL-OXIDES  PERFORMANCE  ELECTRONICS   Exploration of vertical scaling limit in carbon nanotube transistors 期刊论文 APPLIED PHYSICS LETTERS, 2016 Qiu, Chenguang; Zhang, Zhiyong; Yang, Yingjun; Xiao, Mengmeng; Ding, Li; Peng, Lian-Mao 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 FIELD-EFFECT TRANSISTORS  ATOMIC LAYER DEPOSITION  HIGH-KAPPA DIELECTRICS  GATE DIELECTRICS  HIGH-PERFORMANCE  GRAPHENE  FILMS  MOSFET  OXIDE   High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS2 期刊论文 MATERIALS EXPRESS, 2016 Wu, Dianzhong; Zhang, Zhiyong; Lv, Danhui; Yin, Guoli; Peng, Zhijian; Jin, Chuanhong 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 MoS2  Field-Effect Transistors  Top-Gate  Mobility  Inverter  ATOMIC LAYERS  LARGE-AREA  PHASE GROWTH  GRAPHENE  FILMS   Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures 期刊论文 APPLIED PHYSICS LETTERS, 2015, 卷号: 107, 期号: 15 作者:  Jiang, Ran;  Han, Zuyin;  Sun, Weideng;  Du, Xianghao;  Wu, Zhengran 收藏  |  浏览/下载：16/0  |  提交时间：2019/12/17 Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures 期刊论文 Applied Physics Letters, 2015, 卷号: 107, 期号: 15 作者:  Jiang, Ran;  Han, Zuyin;  Sun, Weideng;  Du, Xianghao;  Wu, Zhengran 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Atomic layer deposition of high-quality HFO2 film on graphene using low energy electron beam pretreatment 其他 2014-01-01 Ye, Qing; Chen, Shen; Jia, Yuehui; Guo, Jian; Ren, Liming; Fu, Yunyi; Huang, Ru; Zhang, Xing 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13