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Unravelling the Structure of a Medium-Sized Metalloid Gold Nanocluster and its Filming Property 期刊论文
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2021
作者:  Gu, Wanmiao;  Zhao, Yan;  Zhuang, Shengli;  Zha, Jun;  Dong, Jingwu
收藏  |  浏览/下载：71/0  |  提交时间：2021/05/06
Initial Study of GaN Thin Films for Photocathodes Prepared by Magnetron Sputtering on Copper Substrates 会议论文
Brazil, 2021
作者:  M. Vogel;  X. Jiang, C. Wang
收藏  |  浏览/下载：48/0  |  提交时间：2022/01/18
Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector 期刊论文
Carbon, 2021, 卷号: 175, 页码: 155-163
作者:  Y. Chen;  K. Jiang;  H. Zang;  J. Ben;  S. Zhang
收藏  |  浏览/下载：2/0  |  提交时间：2022/06/13
Preparation and Electroluminescence Properties of CsPbI3/ZnO/GaN Nano-composite Structure 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2021, 卷号: 42, 期号: 11, 页码: 1748-1755
作者:  X.-Y. Zhou;  J. Zhang;  F.-Z. Zhao;  X.-B. Chu;  S.-L. He
收藏  |  浏览/下载：8/0  |  提交时间：2022/06/13
Large-Area Monolayer MoS2Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices 期刊论文
ACS Applied Nano Materials, 2021, 卷号: 4, 期号: 11, 页码: 12127-12136
作者:  P. Yang;  H. Yang;  Z. Wu;  F. Liao;  X. Guo
收藏  |  浏览/下载：5/0  |  提交时间：2022/06/13
Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures 期刊论文
Journal of Materials Science, 2021, 卷号: 56, 期号: 2, 页码: 1481-1491
作者:  M. Tian;  C. Ma;  T. Lin;  J. Liu;  D. N. Talwar
收藏  |  浏览/下载：7/0  |  提交时间：2022/06/13
Large-Area Monolayer MoS2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices 期刊论文
Acs Applied Nano Materials, 2021, 卷号: 4, 期号: 11, 页码: 12127-12136
作者:  P. Yang;  H. F. Yang;  Z. Y. Wu;  F. Y. Liao;  X. J. Guo
收藏  |  浏览/下载：0/0  |  提交时间：2023/06/14
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48
作者:  Guo, Wei;  Xu, Houqiang;  Chen, Li;  Yu, Huabin;  Jiang, Jie'an
收藏  |  浏览/下载：127/0  |  提交时间：2020/12/16
Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
收藏  |  浏览/下载：3/0  |  提交时间：2021/07/06
Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors 期刊论文
Npj 2d Materials and Applications, 2020, 卷号: 4, 期号: 1, 页码: 7
作者:  Y. P. Jia,Z. M. Shi,W. T. Hou,H. Zang,K. Jiang,Y. Chen,S. L. Zhang,Z. B. Qi,T. Wu,X. J. Sun and D. B. Li
收藏  |  浏览/下载：2/0  |  提交时间：2021/07/06

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