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浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 MgO-Based Double Barrier Magnetic Tunnel Junctions With Synthetic Antiferromagnetic Free Layer 期刊论文 IEEE TRANSACTIONS ON MAGNETICS, 2013, 卷号: 49, 期号: 10, 页码: 5204 Li, DL; Feng, JF; Yu, GQ; Wei, HX; Han, XF; Coey, JMD 收藏  |  浏览/下载：15/0  |  提交时间：2014/01/16 Bias voltage at half maximum TMR ratio V-1/2  DBMTJs  output voltage V-out  TMR ratio   Micro fabrication and magnetoelectric properties of amorphous magnetic-tunnel-junctions with Co-Fe-B/Al-O/Co-Fe-B hardcore structure 期刊论文 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2006, 卷号: 304, 期号: 1, 页码: 83 Han, XF; Zhang, XQ; Zeng, ZM; Li, FF; Jiang, LX; Sharif, R; Yao, YD 收藏  |  浏览/下载：16/0  |  提交时间：2013/09/18 CO75FE25 FERROMAGNETIC ELECTRODES  ROOM-TEMPERATURE  MAGNETORESISTANCE  FILMS  TMR   High magnetoresistance in Co-Fe-B-based double barrier magnetic tunnel junction 期刊论文 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2006, 卷号: 303, 期号: 2, 页码: E219 Zeng, ZM; Wei, HX; Jiang, LX; Du, GX; Zhan, WS; Han, XF 收藏  |  浏览/下载：12/0  |  提交时间：2013/09/17 Controlled fabrication of nano-scale double barrier magnetic tunnel junctions using focused ion beam milling method 期刊论文 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2006, 卷号: 303, 期号: 2, 页码: E208 Wei, HX; Wang, TX; Zeng, ZM; Zhang, XQ; Zhao, J; Han, XF 收藏  |  浏览/下载：16/0  |  提交时间：2013/09/17 Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tunnel junction with amorphous Co-Fe-B electrodes 期刊论文 EUROPEAN PHYSICAL JOURNAL B, 2006, 卷号: 52, 期号: 2, 页码: 205 Zeng, ZM; Wang, Y; Han, XF; Zhan, WS; Zhang, Z 收藏  |  浏览/下载：16/0  |  提交时间：2013/09/17 CO75FE25 FERROMAGNETIC ELECTRODES  ROOM-TEMPERATURE  MAGNETORESISTANCE  MAGNON  SINGLE  LAYERS  TMR   Tunneling current-induced butterfly-shaped domains and magnetization switching in DBMTJs 期刊论文 IEEE TRANSACTIONS ON MAGNETICS, 2005, 卷号: 41, 期号: 10, 页码: 2636 Zhao, SF; Zhao, J; Zeng, ZM; Han, XF; Yu, ACC; Ando, Y; Miyazaki, T 收藏  |  浏览/下载：13/0  |  提交时间：2013/09/23 DOUBLE-BARRIER  JUNCTIONS  MAGNETORESISTANCE  SINGLE   Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistors 期刊论文 ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 7, 页码: 3351 Zeng, ZM; Han, XF; Du, GX; Zhan, WS; Wang, Y; Zhang, Z 收藏  |  浏览/下载：13/0  |  提交时间：2013/09/18 ROOM-TEMPERATURE  DEPENDENCE  STATES   Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions 期刊论文 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 卷号: 282, 页码: 225 Han, XF; Zhao, SF; Li, FF; Daibou, T; Kubota, H; Ando, Y; Miyazaki, T 收藏  |  浏览/下载：19/0  |  提交时间：2013/09/24 CO75FE25 FERROMAGNETIC ELECTRODES  MAGNETORESISTANCE  SINGLE  MEMORY  FILMS  HEAD