MgO-Based Double Barrier Magnetic Tunnel Junctions With Synthetic Antiferromagnetic Free Layer

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	MgO-Based Double Barrier Magnetic Tunnel Junctions With Synthetic Antiferromagnetic Free Layer
	Li, DL ; Feng, JF ; Yu, GQ ; Wei, HX ; Han, XF ; Coey, JMD
刊名	IEEE TRANSACTIONS ON MAGNETICS
	2013
卷号	49 期号:10 页码:5204
关键词	Bias voltage at half maximum TMR ratio V-1/2 DBMTJs output voltage V-out TMR ratio
ISSN号	0018-9464
通讯作者	Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	CoFeB/Ru/CoFeB has been used as the middle free layer in MgO-based double barrier magnetic tunnel junctions (DBMTJs). The tunneling magnetoresistance (TMR) ratio, V-1/2 (bias voltage at half maximum TMR ratio) and V-out (output voltage, defined as V multiplied by TMR ratio) have been investigated as a function of annealing temperature (T-a) and Ru thickness (t(Ru)) in the free layer. Magnetization data reveal that the two CoFeB layers in CoFeB/Ru/CoFeB are antiferromagnetically coupled. Compared with V-1/2 of only 0.31 V for single barrier MTJs (SBMTJs) annealed at 375 degrees C, V-1/2 for DBMTJs is up to 0.66 V. By increasing T-a, TMR ratio first increases, reaching the highest critical value, and then decreases. The highest TMR ratio is 181% with t(Ru) = 0.6 nm, which is much higher than that obtained in the DBMTJs with the pure CoFeB as the free layer. The improved TMR ratio is mainly due to the relatively thorough crystallization of the CoFeB layers in the free layer. The thermal annealing has been proven to be an effective method to remove the dissimilarity of the top and bottom CoFeB/MgO interfaces. V-out in the positive and negative voltage branches follows the same trend as that of TMR ratio with T-a.
资助信息	Fundamental Research of Ministry of Science and Technology [MOST] [2010CB934400]; National Natural Science Foundation [NSFC] [51021061, 10934009, 11174341, 11222432]; MANSE [2005/IN/1850]; Irish Government; MOST, China
语种	英语
公开日期	2014-01-16
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57211]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, DL,Feng, JF,Yu, GQ,et al. MgO-Based Double Barrier Magnetic Tunnel Junctions With Synthetic Antiferromagnetic Free Layer[J]. IEEE TRANSACTIONS ON MAGNETICS,2013,49(10):5204.
APA	Li, DL,Feng, JF,Yu, GQ,Wei, HX,Han, XF,&Coey, JMD.(2013).MgO-Based Double Barrier Magnetic Tunnel Junctions With Synthetic Antiferromagnetic Free Layer.IEEE TRANSACTIONS ON MAGNETICS,49(10),5204.
MLA	Li, DL,et al."MgO-Based Double Barrier Magnetic Tunnel Junctions With Synthetic Antiferromagnetic Free Layer".IEEE TRANSACTIONS ON MAGNETICS 49.10(2013):5204.