×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京大学 [12]
兰州大学 [5]
清华大学 [3]
微电子研究所 [3]
化学研究所 [2]
西安理工大学 [2]
更多...
内容类型
期刊论文 [30]
专利 [2]
会议论文 [2]
学位论文 [2]
其他 [1]
发表日期
2022 [1]
2021 [1]
2019 [4]
2017 [2]
2016 [7]
2015 [4]
更多...
学科主题
engineerin... [2]
science & ... [2]
science & ... [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共37条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure
期刊论文
THIN SOLID FILMS, 2022, 卷号: 762
作者:
Cheng, Wangping
;
Li, Chenhui
;
Zhou, Chen
;
He, Yuandi
;
Wei, Renhuai
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/12/23
Resistive random access memory
Resistive switching
Self-rectifying behavior
Copper chromium oxide
Thin film
Solution deposition
Integrating Two Logics Into One Crossbar Array for Logic Gate Design
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 卷号: 68, 期号: 8, 页码: 2987-2991
作者:
Yao, Lian
;
Liu, Peng
;
Wu, Jigang
;
Han, Yinhe
;
Zhong, Yuehang
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/12/01
Logic gates
Memristors
Logic arrays
Resistance
Logic functions
Adders
Switches
Logic gates
memristive crossbar
material implication
not material implication
1-bit full adder
Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM Array
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 8, 页码: 3337-3341
作者:
Zhang, Xinlei
;
Ji, Hao
;
Jiang, Ran
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/11
1R
crossbar array
hafnium oxide
memory
selector
self-rectifying
A NiOx, based threshold switching selector for RRAM crossbar array application
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Xie, Hongwei
;
Liu, Yantao
;
Huang, Zhongxiao
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/20
selector device
threshold switching
resistance
switching memory (RR4M)
NiO
A NiOx based threshold switching selector for RRAM crossbar array application
会议论文
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Xi'an, China, 2019-06-12
作者:
Xie, Hongwei
;
Liu, Yantao
;
Huang, Zhongxiao
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/20
Current-controlled negative differential resistance in small-polaron hopping system
期刊论文
AIP ADVANCES, 2019, 卷号: 9, 期号: 5, 页码: 55223
作者:
Wu Jing
;
Hu Tao
;
Yin Yiming
;
Li Jingbo
;
Zhou Wei
收藏
  |  
浏览/下载:267/0
  |  
提交时间:2019/11/13
ELECTRICAL-CONDUCTIVITY
CATION VALENCIES
TRANSITION
FILMS
RESISTIVITY
ELECTRODE
OXIDES
MN3O4
POWER
Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering
期刊论文
NANOTECHNOLOGY, 2017
Wang, Zongwei
;
Kang, Jian
;
Yu, Zhizhen
;
Fang, Yichen
;
Ling, Yaotian
;
Cai, Yimao
;
Huang, Ru
;
Wang, Yangyuan
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
interface engineering
nonvolatile memory
resistive random access memory (RRAM)
resistive switching
nonlinearity
tantalum oxide
BIPOLAR RRAM
THIN-FILM
MEMORY
MECHANISM
ARCHITECTURE
CHALLENGES
ARRAY
MEMRISTOR
BILAYER
Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique
期刊论文
NANOSCALE RESEARCH LETTERS, 2017
Han, Runze
;
Huang, Peng
;
Zhao, Yudi
;
Chen, Zhe
;
Liu, Lifeng
;
Liu, Xiaoyan
;
Kang, Jinfeng
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
RRAM
Crossbar
Atomic layer deposition (ALD)
Logic operation
MEMORY
Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM
期刊论文
MICROELECTRONIC ENGINEERING, 2016, 卷号: 164, 页码: 20-22
作者:
Li, Yingtao
;
Wang, Yang
;
Fu, Liping
;
Chen, Chuanbing
;
Yuan, Peng
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2017/01/13
RRAM
Transient Voltage Suppressor
Bipolar selector
Crossbar array
Super Nonlinear RRAM with Ultra-low Power for 3D Vertical Nano-Crossbar Array
期刊论文
nanoscale, 2016
作者:
Luo Q(罗庆)
;
Xu XX(许晓欣)
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/05/11
©版权所有 ©2017 CSpace - Powered by
CSpace