Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM

	Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM
	Li, Yingtao; Wang, Yang; Fu, Liping; Chen, Chuanbing; Yuan, Peng; Gao, Xiaoping
刊名	MICROELECTRONIC ENGINEERING
	2016-10-01
卷号	164 页码:20-22
关键词	RRAM Transient Voltage Suppressor Bipolar selector Crossbar array
ISSN号	0167-9317
通讯作者	Li, YT (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Tianshui Rd 222, Lanzhou 730000, Peoples R China. ; Gao, XP (reprint author), Gansu Acad Sci, Inst Sensor Technol, Gansu Key Lab Sensor & Sensor Technol, Lanzhou 730000, Peoples R China. ; Fu, LP (reprint author), Lanzhou Univ, Cuiying Honors Coll, Lanzhou 730000, Peoples R China.
学科主题	Engineering; Science & Technology - Other Topics; Optics; Physics
出版地	AMSTERDAM
语种	英语
WOS记录号	WOS:000384855900004
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/181688]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Li, Yingtao,Wang, Yang,Fu, Liping,et al. Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM[J]. MICROELECTRONIC ENGINEERING,2016,164:20-22.
APA	Li, Yingtao,Wang, Yang,Fu, Liping,Chen, Chuanbing,Yuan, Peng,&Gao, Xiaoping.(2016).Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM.MICROELECTRONIC ENGINEERING,164,20-22.
MLA	Li, Yingtao,et al."Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM".MICROELECTRONIC ENGINEERING 164(2016):20-22.