CORC

在结果中检索

CORC

浏览/检索结果: 共24条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga2O3 power diodes 期刊论文
APPLIED PHYSICS LETTERS, 2023, 卷号: 123
作者:  Liu, Jinyang;  Han, Zhao;  Ren, Lei;  Yang, Xiao;  Xu, Guangwei
收藏  |  浏览/下载：9/0  |  提交时间：2023/11/10
Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3 期刊论文
CHINESE PHYSICS B, 2019, 卷号: 28
作者:  Yang, Chao;  Liang, Hongwei;  Zhang, Zhenzhong;  Xia, Xiaochuan;  Zhang, Heqiu
收藏  |  浏览/下载：17/0  |  提交时间：2019/12/02
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film. 期刊论文
Nanoscale research letters, 2019, 卷号: Vol.14 No.1
作者:  Hu Zhuangzhuang;  Feng Qian;  Feng Zhaoqing;  Cai Yuncong;  Shen Yixian
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/13
High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 3, 页码: 451-454
作者:  Du, Lulu;  Xin, Qian;  Xu, Mingsheng;  Liu, Yaxuan;  Mu, Wenxiang
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/11
High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination 期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: Vol.14
作者:  Gao, Yangyang;  Li, Ang;  Feng, Qian;  Hu, Zhuangzhuang;  Feng, Zhaoqing
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/17
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated -Ga2O3 Thin Film 期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: Vol.14
作者:  Hu, Zhuangzhuang;  Feng, Qian;  Feng, Zhaoqing;  Cai, Yuncong;  Shen, Yixian
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17
High-Voltage β-Ga 2 O 3 Schottky Diode with Argon-Implanted Edge Termination 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14
作者:  Gao Y.;  Li A.;  Feng Q.;  Hu Z.;  Feng Z.
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14
作者:  Gao, Yangyang;  Li, Ang;  Feng, Qian;  Hu, Zhuangzhuang;  Feng, Zhaoqing
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/11
High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination 期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: 14
作者:  Gao, Yangyang;  Li, Ang;  Feng, Qian;  Hu, Zhuangzhuang;  Feng, Zhaoqing
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/11
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film 期刊论文
Nanoscale Research Letters, 2019, 卷号: Vol.14 No.1
作者:  Zhuangzhuang Hu;  Qian Feng;  Zhaoqing Feng;  Yuncong Cai;  Yixian Shen
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/13

©版权所有 ©2017 CSpace - Powered by CSpace