| High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination | |
| Gao, Yangyang; Li, Ang; Feng, Qian; Hu, Zhuangzhuang; Feng, Zhaoqing; Zhang, Ke; Lu, Xiaoli; Zhang, Chunfu; Zhou, Hong; Mu, Wenxiang | |
| 刊名 | Nanoscale Research Letters
 |
| 2019 | |
| 卷号 | 14 |
| DOI | 10.1186/s11671-018-2849-y |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4537739 |
| 专题 | 山东大学 |
| 作者单位 | S |
| 推荐引用方式 GB/T 7714 | Gao, Yangyang,Li, Ang,Feng, Qian,et al. High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination[J]. Nanoscale Research Letters,2019,14. |
| APA | Gao, Yangyang.,Li, Ang.,Feng, Qian.,Hu, Zhuangzhuang.,Feng, Zhaoqing.,...&Zha 更多.(2019).High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination.Nanoscale Research Letters,14. |
| MLA | Gao, Yangyang,et al."High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination".Nanoscale Research Letters 14(2019). |
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