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Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.704, 页码: 322-328
作者:  Lv,J. G.;  Li,W. D.;  Zheng,C. Y.;  Zhu,L.;  Liang,S.
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/22
Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文
Journal of Sol-Gel Science and Technology, 2017, 卷号: Vol.83 No.3, 页码: 675-682
作者:  Liang, S.;  Jiang, S. S.;  Sun, Z. Q.;  He, G.;  Zhu, L.
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/22
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.716, 页码: 1-6
作者:  Liu,Yanmei;  Sun,Zhaoqi;  Jiang,Shanshan;  Li,Jing;  Liu,Mao
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24
Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2017, 卷号: Vol.33 No.8, 页码: 901-906
作者:  Jiang,Shanshan;  Zhu,Li;  Gao,Juan;  Xiao,Dongqi;  Liang,Shuang
收藏  |  浏览/下载：8/0  |  提交时间：2019/04/24
Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application 期刊论文
Ceramics International, 2016, 卷号: Vol.42 No.1Part A, 页码: 759-766
作者:  Sun,Zhaoqi;  Lv,Jianguo;  Liu,Mao;  Xiao,Dongqi;  Jin,Peng
收藏  |  浏览/下载：2/0  |  提交时间：2019/04/22
Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived AlO passivation layer 期刊论文
ACS Applied Materials and Interfaces, 2014, 卷号: Vol.6 No.24, 页码: 22013-22025
作者:  Chen, H.;  He, G.;  Cui, J.;  Chen, X.;  Sun, Z.
收藏  |  浏览/下载：10/0  |  提交时间：2019/04/24
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates. 期刊论文
Surface Science Reports, 2013, 卷号: Vol.68 No.1, 页码: 68-107
作者:  Sun,Zhaoqi;  He,Gang;  Chen,Xiaoshuang
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/22
CVD-derived Hf-based High-k Gate Dielectrics 期刊论文
Critical Reviews in Solid State and Materials Science, 2013, 卷号: Vol.38 No.4, 页码: 235-261
作者:  Liu,Yanmei;  Sun,Zhaoqi;  Zhang,Lide;  He,Gang;  Chen,Xiaoshuang
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/22
Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization 期刊论文
Journal of Materials Chemistry, 2012, 卷号: Vol.22 No.15, 页码: 7468-7477
作者:  Chen,XS;  Shi,SW;  Zhang,LD;  Sun,ZQ;  He,G
收藏  |  浏览/下载：14/0  |  提交时间：2019/04/22
Review and Perspective of Hf-based High-k Gate Dielectrics on Silicon 期刊论文
Critical Reviews in Solid State and Materials Science, 2012, 卷号: Vol.37 No.3, 页码: 131-157
作者:  Li,G;  Zhang,LD;  Sun,ZQ;  He,G
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22

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