×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京航空航天大学 [15]
内容类型
期刊论文 [12]
会议论文 [3]
发表日期
2019 [5]
2018 [1]
2017 [1]
2016 [4]
2015 [3]
2014 [1]
更多...
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共15条,第1-10条
帮助
限定条件
专题:北京航空航天大学
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Spintronic Processing Unit in Spin Transfer Torque Magnetic Random Access Memory
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 2017-2022
作者:
Zhang, He
;
Kang, Wang
;
Cao, Kaihua
;
Wu, Bi
;
Zhang, Youguang
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/12/30
Process-in-memory (PIM)
spin transfer toque magnetic random access memory (STT-MRAM)
spintronic processing unit (SPU)
von Neumann bottleneck
Phase-transition-induced large magnetic anisotropy change in VO2/(Co/Pt)(2) heterostructure
期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114
作者:
Wei, Guodong
;
Lin, Xiaoyang
;
Si, Zhizhong
;
Lei, Na
;
Chen, Yanxue
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
Energy efficiency
Magnetism
Metal insulator boundaries
Metal insulator transition
Modulation
Platinum compounds
Semiconductor insulator boundaries
Vanadium dioxide
Energy density
Interfacial couplings
Interfacial strain
Low-power consumption
Modulation strategy
Perpendicular magnetic anisotropy
Spintronic device
Transition materials
Magnetic anisotropy
A comprehensive compact model for the design of all-spin-logic based circuits
期刊论文
MICROELECTRONICS JOURNAL, 2019, 卷号: 92
作者:
An, Qi
;
Le Beux, Sebastien
;
O'Connor, Ian
;
Klein, Jacques-Olivier
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/30
Spintronic
All spin logic
Circuit design
Compact model
Spintronic Processing Unit Within Voltage-Gated Spin Hall Effect MRAMs
期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2019, 卷号: 18, 页码: 473-483
作者:
Zhang, He
;
Kang, Wang
;
Wu, Bi
;
Ouyang, Peng
;
Deng, Erya
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/30
Spintronic processing unit (SPU)
voltage-gated Spin Hall Effect MRAMs
processing-in-memory (PIM)
non-von-Neumann computing architectures
Emerging Spintronic Devices: From Ultra-High-Density Memory to Logic-In-Memory
会议论文
Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018, 2018-11-21
作者:
Zhang, Yue
;
Wang, Guanda
;
Huang, Zhe
;
Zhang, Zhizhong
;
Wang, Jinkai
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
CMOS integrated circuits
Data storage equipment
Magnetic devices
Metals
MOS devices
Oxide semiconductors
Semiconductor junctions
Spintronics
Tunnel junctions
Complementary metal oxide semiconductors
Logic applications
Logic in memory
Magnetic tunnel junction
Non-volatile memory
Spintronic device
Systematic study
Ultrahigh density
Computer circuits
Dynamics of a magnetic skyrmionium driven by spin waves
期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112
作者:
Li, Sai
;
Xia, Jing
;
Zhang, Xichao
;
Ezawa, Motohiko
;
Kang, Wang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Hall mobility
Spin Hall effect
Spin waves
Building blockes
Damping coefficients
Information processing devices
Non-volatile
Out-of-plane magnetic fields
Spintronic device
Spin dynamics
Spin-filter effect and spin-polarized optoelectronic properties in annulene-based molecular spintronic devices
期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26
作者:
Ma, Zhiyuan
;
Li, Ying
;
Song, Xian-Jiang
;
Yang, Zhi
;
Xu, Li-Chun
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/12/30
annulene molecular
molecular spintronic devices
quantum transport properties
Spintronic logic design methodology based on spin Hall effect-driven magnetic tunnel junctions
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 卷号: 49
作者:
Kang, Wang
;
Wang, Zhaohao
;
Zhang, Youguang
;
Klein, Jacques-Olivier
;
Lv, Weifeng
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/30
direct cascading
magnetic tunnel junction
spin Hall effect
spintronic logic
All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron
会议论文
IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, PORTUGAL, 2016-08-01
作者:
Zhang, Deming
;
Zeng, Lang
;
Cao, Kaihua
;
Wang, Mengxing
;
Peng, Shouzhong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
All Spin Artificial Neural Network (ASANN)
artificial synaptic device
compound spintronic device
magnetic tunnel junction (MTJ)
post-CMOS non-volatile memory (NVM) technologies
resistive RAM (RRAM)
Non-volatile magnetic decoder based on MTJs
期刊论文
ELECTRONICS LETTERS, 2016, 卷号: 52, 页码: 1774-1776
作者:
Deng, E. Y.
;
Prenat, G.
;
Anghel, L.
;
Zhao, W. S.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/30
magnetic tunnelling
CMOS integrated circuits
Monte Carlo methods
transient analysis
decoding
nonvolatile MD
spin transfer torque magnetic tunnel junction
hybrid spintronic-CMOS circuit design
nonvolatile magnetic decoder
nonvolatile state
area efficiency
sense amplifier
CMOS-based dynamic decoder mode
nonvolatile data sensing mode
sneak current
compact STT-MTJ model
STMicroelectronics CMOS design kit
Monte Carlo simulation
transient simulation
©版权所有 ©2017 CSpace - Powered by
CSpace