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科研机构
半导体研究所 [7]
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期刊论文 [7]
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2011 [1]
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半导体物理 [7]
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Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
;
Ni, Haiqiao
;
Xu, Yingqiang
;
Niu, Zhichuan
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|
浏览/下载：75/0
|
提交时间：2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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浏览/下载：218/56
|
提交时间：2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure
期刊论文
chinese physics letters, 1998, 卷号: 15, 期号: 1, 页码: 57-59
作者:
Xu B
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|
浏览/下载：38/0
|
提交时间：2010/08/12
MULTIPLE-QUANTUM WELLS
PHOTOLUMINESCENCE SPECTROSCOPY
TRANSISTOR STRUCTURES
ELECTRON
TEMPERATURE
DENSITY
Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)
期刊论文
surface science, 1997, 卷号: 381, 期号: 1, 页码: 1-11
Ranke W
;
Xing YR
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|
浏览/下载：13/0
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提交时间：2010/11/17
adsorption kinetics
low energy electron diffraction
low index single crystal surfaces
silicon
surface structure
morphology
roughness
and topography
vicinal single crystal surfaces
visible and ultraviolet photoelectron spectroscopy
water
SCANNING-TUNNELING-MICROSCOPY
CYLINDRICAL SILICON CRYSTAL
MILLER INDEX SURFACES
ROOM-TEMPERATURE
VICINAL SURFACES
ATOMIC-STRUCTURE
H2O
SI(100)
CHEMISORPTION
LEED
The third subband population in modulation-doped InGaAs/InAlAs heterostructures
期刊论文
journal of applied physics, 1997, 卷号: 82, 期号: 12, 页码: 6107-6109
作者:
Xu B
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浏览/下载：36/0
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提交时间：2010/08/12
MULTIPLE-QUANTUM WELLS
PHOTOLUMINESCENCE SPECTROSCOPY
TRANSISTOR STRUCTURES
ELECTRON
TEMPERATURE
DENSITY
INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS
期刊论文
communications in theoretical physics, 1993, 卷号: 20, 期号: 2, 页码: 159-170
WANG JQ
;
GU ZQ
;
LI MF
;
LAI WY
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浏览/下载：21/0
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提交时间：2010/11/15
NORM-CONSERVING PSEUDOPOTENTIALS
LATTICE-DYNAMICAL PROPERTIES
SCATTERING RATES
STRUCTURAL-PROPERTIES
TEMPERATURE-DEPENDENCE
ELECTRON-PHONON
GAAS
SPECTROSCOPY
POINTS
TIN
INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS
期刊论文
physical review b, 1992, 卷号: 46, 期号: 19, 页码: 12358-12364
WANG JQ
;
GU ZQ
;
LI MF
;
LAI WY
收藏
|
浏览/下载：15/0
|
提交时间：2010/11/15
LATTICE-DYNAMICAL PROPERTIES
SCATTERING RATES
ZINCBLENDE SEMICONDUCTORS
TEMPERATURE-DEPENDENCE
GALLIUM-PHOSPHIDE
ELECTRON-PHONON
GAAS
SPECTROSCOPY
POINTS
ZONE
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