INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS

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	INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS
	WANG JQ ; GU ZQ ; LI MF ; LAI WY
刊名	physical review b
	1992
卷号	46 期号:19 页码:12358-12364
关键词	LATTICE-DYNAMICAL PROPERTIES SCATTERING RATES ZINCBLENDE SEMICONDUCTORS TEMPERATURE-DEPENDENCE GALLIUM-PHOSPHIDE ELECTRON-PHONON GAAS SPECTROSCOPY POINTS ZONE
ISSN号	0163-1829
通讯作者	wang jq acad sinicainst physpob 603beijing 100080peoples r china
中文摘要	intervalley gamma-x deformation-potential constants (ivdp's) have been calculated by use of a first-principles pseudopotential method for the iii-v zinc-blende semiconductors alp, alas, alsb, gap, gaas, gasb, inp, inas, and insb. when the calculated ivdp's of la phonons for gap, inp, and inas and of lo phonons for alas, alsb, gaas, gasb, and insb are compared with results of a previous calculation that used the empirical pseudopotential method (epm) and a rigid-ion approximation, good agreement is found. however, our ab initio pseudopotential results on ivdp's of la phonons for alas, alsb, gaas, gasb, and insb and of lo phonons for gap, inp, and inas are about one order of magnitude smaller than those obtained by use of epm calculations, indicating that the electron redistribution accompanying crystal-lattice deformation has a significant effect on gamma-x intervalley scattering for these phonon modes when the anions are being displaced. in our calculations the la- and lo-phonon modes at the x point have been evaluated in the frozen-phonon approximation. we have also obtained the lax- and lox-phonon frequencies for these materials from total-energy calculations, which agree very well with experimental values for these semiconductors. we have also calculated gamma-x hole-phonon scattering matrix elements for the top valence bands in these nine semiconductors, from which the gamma-x ivdp's of the top valence bands for the longitudinal phonons and transverse phonons are evaluated, respectively.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14153]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	WANG JQ,GU ZQ,LI MF,et al. INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS[J]. physical review b,1992,46(19):12358-12364.
APA	WANG JQ,GU ZQ,LI MF,&LAI WY.(1992).INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS.physical review b,46(19),12358-12364.
MLA	WANG JQ,et al."INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS".physical review b 46.19(1992):12358-12364.