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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhanced absorption in nanocrystalline silicon thin film solar cells using surface plasmon polaritons 期刊论文 icmree2011 - proceedings 2011 international conference on materials for renewable energy and environment, 2011, 卷号: 1, 页码: 242-246 Hao, Huiying; Li, Weimin; Xing, Jie; Fan, Zhenjun, 收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Absorption  Electromagnetic wave polarization  Energy gap  Gold  Light absorption  Nanostructured materials  Optical properties  Particle optics  Phonons  Photons  Plasmons  Quantum theory  Scattering  Semiconducting silicon compounds  Silicon solar cells  Silver  Solar absorbers  Solar energy  Surface plasmon resonance  Surfaces  Thin films   Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells 期刊论文 cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13 Liu, Shi-Yong; Zeng, Xiang-Bo; Peng, Wen-Bo; Yao, Wen-Jie; Xie, Xiao-Bing; Yang, Ping; Wang, Chao; Wang, Zhan-Guo 收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14 Amorphous films  Chemical vapor deposition  Energy gap  High resolution electron microscopy  High resolution transmission electron microscopy  Hydrogen  Nanocrystalline silicon  Optical band gaps  Plasma deposition  Plasma enhanced chemical vapor deposition  Raman spectroscopy  Semiconducting silicon compounds  Solar power generation  Thin films  Transmission electron microscopy   Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X 收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06 LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  BAND-GAP  MG  PHOTOLUMINESCENCE  INGAN  DEPENDENCE  STRAIN  ENERGY  INN   Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文 applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143 Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：196/52  |  提交时间：2010/04/28 BAND-GAP  TEMPERATURE-DEPENDENCE  ENERGY  SEMICONDUCTORS  SPECTRA  EPITAXY  GROWTH  LAYERS   Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144 Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH; Ge WK 收藏  |  浏览/下载：99/7  |  提交时间：2010/08/12 molecular beam epitaxy  quantum wells  BAND-GAP ENERGY  PHOTOLUMINESCENCE  TEMPERATURE  GANXAS1-X  FILMS   X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文 journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32 Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 x-ray diffraction  strain relaxation  GaNxAs1-x/GaAs  photoluminescence  RHEED  MOLECULAR-BEAM EPITAXY  TEMPERATURE PULSED OPERATION  BAND-GAP ENERGY  NITROGEN  GAASN  GANXAS1-X  GAAS1-XNX  ALLOYS  LASERS  LAYERS   Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 GaNAs  DC active N-2 plasma  molecular beam epitaxy  nitrogen content  Fourier transform infrared spectroscopy of intensity  BAND-GAP ENERGY  GAAS1-XNX  NITROGEN   Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy 期刊论文 journal of crystal growth, 2000, 卷号: 209, 期号: 4, 页码: 648-652 Pan Z; Li LH; Lin YW; Zhou ZQ; Zhang W; Wang YT; Wu RH 收藏  |  浏览/下载：60/0  |  提交时间：2010/08/12 GaNAs/GaAs superlattice  X-ray diffraction  periodicity fluctuation  MBE  RHEED  BAND-GAP ENERGY  NITROGEN  ALLOYS  DIFFRACTION  COEFFICIENT  SOLUBILITY  OPERATION  GAAS1-XNX  GAASN   Epitaxial growth of GaNAs/GaAs heterostructure materials 期刊论文 thin solid films, 2000, 卷号: 368, 期号: 2, 页码: 249-252 Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 GaNAs  DC active N-2 plasma  molecular beam epitaxy  nitrogen content  Fourier transform infrared spectroscopy of intensity  BAND-GAP ENERGY  GAAS1-XNX  NITROGEN   Photoluminescence of GaInP under high pressure 期刊论文 journal of applied physics, 1996, 卷号: 79, 期号: 9, 页码: 7177-7182 Dong JR; Li GH; Wang ZG; Lu DC; Liu XL; Li XB; Sun DZ; Kong MY; Wang ZJ 收藏  |  浏览/下载：24/0  |  提交时间：2010/11/17 VAPOR-PHASE EPITAXY  HYDROSTATIC-PRESSURE  ORDERED GA0.5IN0.5P  GROWTH TEMPERATURE  DEPENDENCE  GAP  SPECTRUM  ENERGY