Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

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	Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
	Li LH ; Pan Z ; Zhang W ; Lin YW ; Wang XY ; Wu RH ; Ge WK
刊名	journal of crystal growth
	2001
卷号	223 期号:1-2 页码:140-144
关键词	molecular beam epitaxy quantum wells BAND-GAP ENERGY PHOTOLUMINESCENCE TEMPERATURE GANXAS1-X FILMS
ISSN号	0022-0248
通讯作者	li lh,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china.
中文摘要	the effect of ion-induced damage on ganas/gaas quantum wells (qws) grown by molecular beam epitaxy employing a dc plasma as the n source was investigated. ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the x-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. it was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the qws. the bandedge potential fluctuations for the samples grown with and without ion removal magnets (irms) are 44 and 63 mev, respectively. it was found that the n-as atomic interdiffusion at the interfaces of the qws was enhanced by the ion damage-induced defects. the estimated activation energies of the n-as atomic interdiffusion for the samples grown with and without irms are 3.34 and 1.78 ev, respectively. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12276]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li LH,Pan Z,Zhang W,et al. Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy[J]. journal of crystal growth,2001,223(1-2):140-144.
APA	Li LH.,Pan Z.,Zhang W.,Lin YW.,Wang XY.,...&Ge WK.(2001).Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy.journal of crystal growth,223(1-2),140-144.
MLA	Li LH,et al."Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy".journal of crystal growth 223.1-2(2001):140-144.