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CORC

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Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 103, 页码: 113-120
作者:  Liu, Huan;  Cheng, Aijie;  Lin, Zhaojun;  Cui, Peng;  Liu, Yan
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 卷号: 68, 期号: 7, 页码: 883-888
作者:  Liu, Yan;  Lin, Zhaojun;  Zhao, Jingtao;  Yang, Ming;  Shi, Wenjing
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/16
Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 10, 页码: 3908-3913
作者:  Yang, Ming;  Lv, Yuanjie;  Feng, Zhihong;  Lin, Wei;  Cui, Peng
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/16
Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells 期刊论文
CHINESE OPTICS LETTERS, 2016, 卷号: 14, 期号: 4
作者:  Lu, Haiyan;  Lu, Yuanjie;  Wang, Qiang;  Li, Jianfei;  Feng, Zhihong
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/16
Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodes 期刊论文
MATERIALS EXPRESS, 2016, 卷号: 6, 期号: 6, 页码: 527-532
作者:  Li, Jianfei;  Li, Changfu;  Mu, Qi;  Ji, Ziwu;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/16
Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells 期刊论文
Chinese Optics Letters, 2016, 卷号: 14, 期号: 8
作者:  Haiyan;  , Yuanjie;  Wang, Qiang;  Li, Jianfei;  Feng, Zhihong
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/16
Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells (vol 14, 042302, 2016) 期刊论文
CHINESE OPTICS LETTERS, 2016, 卷号: 14, 期号: 8
作者:  Lu, Haiyan;  Lu, Yuanjie;  Wang, Qiang;  Li, Jianfei;  Feng, Zhihong
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/16
Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 119, 期号: 22
作者:  Yang, Ming;  Lv, Yuanjie;  Feng, Zhihong;  Lin, Wei;  Cui, Peng
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/16
Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 4, 页码: 1471-1477
作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Cui, Peng;  Fu, Chen
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/16
Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 卷号: 76, 页码: 1-5
作者:  Mu, Qi;  Xu, Mingsheng;  Wang, Xuesong;  Wang, Qiang;  Lv, Yuanjie
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/16

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