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	Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodes
	Li, Jianfei; Li, Changfu; Mu, Qi; Ji, Ziwu; Lv, Yuanjie; Feng, Zhihong; Xu, Xiangang; Xu, Mingsheng
刊名	MATERIALS EXPRESS
	2016
卷号	6期号:6页码:527-532
关键词	InGaN/GaN Multiple-Quantum-Well Low Temperature p-GaN Layer Electroluminescence Localization Effect Hole Injection Efficiency
DOI	10.1166/mex.2016.1334
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4694669
专题	山东大学
作者单位	1.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China. 2.Hebei Semic
推荐引用方式 GB/T 7714	Li, Jianfei,Li, Changfu,Mu, Qi,et al. Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodes[J]. MATERIALS EXPRESS,2016,6(6):527-532.
APA	Li, Jianfei.,Li, Changfu.,Mu, Qi.,Ji, Ziwu.,Lv, Yuanjie.,...&Xu, Mingsheng.(2016).Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodes.MATERIALS EXPRESS,6(6),527-532.
MLA	Li, Jianfei,et al."Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodes".MATERIALS EXPRESS 6.6(2016):527-532.

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