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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：会议论文    专题：兰州理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Oxygen octahedral coupling mediated ferroelectric-antiferroelectric phase transition based on domain wall engineering 会议论文 作者:  Geng, W.R.;  Guo, X.W.;  Zhu, Y.L.;  Wang, Y.J.;  Tang, Y.L. 收藏  |  浏览/下载：5/0  |  提交时间：2020/12/18 Antiferroelectric materials  Antiferroelectricity  Bismuth compounds  Calculations  Energy storage  Ferroelectric films  Ferroelectricity  High resolution transmission electron microscopy  Iron compounds  Oxygen  Ultrathin filmsAberration-corrected  Antiferroelectric phase transition  Antiparallel cation displacements  Energy storage and conversions  Ferroelectric domains  First-principles calculation  Structural transformation  Transmission electron microscopy observation   Flexoelectricity-induced retention failure in ferroelectric films 会议论文 作者:  Zou, M.J.;  Tang, Y.L.;  Zhu, Y.L.;  Wang, Y.J.;  Feng, Y.P. 收藏  |  浏览/下载：5/0  |  提交时间：2020/12/18 Atoms  Ferroelectricity  High resolution transmission electron microscopy  Polarization  Scanning electron microscopy  StrainAntiphase domains  Experimental evidence  Ferroelectric domains  Ferroelectric memory  Piezoelectric force microscopy  Reciprocal space mapping  Retention properties  Scanning transmission electron microscopy   Real-time observation of phase coexistence and a1/a2 to flux-closure domain transformation in ferroelectric films 会议论文 作者:  Ma, J.Y.;  Wang, Y.J.;  Zhu, Y.L.;  Tang, Y.L.;  Han, M.J. 收藏  |  浏览/下载：15/0  |  提交时间：2020/12/18 Electron beams  Ferroelectric films  Ferroelectricity  Gadolinium compounds  Lead titanate  Strontium titanates  Textures  Titanium compoundsDepolarization fields  Electron beam irradiation  Ferroelectric oxides  Injected electrons  Partial dislocations  Phase co-existence  Phase-field simulation  Real time observation   Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects 会议论文 作者:  Geng, W.R.;  Tian, X.H.;  Jiang, Y.X.;  Zhu, Y.L.;  Tang, Y.L. 收藏  |  浏览/下载：2/0  |  提交时间：2020/12/18 Bismuth compounds  Defects  Domain walls  Electric field measurement  Electronic states  Ferroelectric materials  Film growth  High resolution transmission electron microscopy  Interface states  Iron compounds  Modulation  Oxygen  Scanning electron microscopy  Thin films  TransmissionsAberration-corrected scanning transmission electron microscopies  BiFeO3 thin film  Charged domain wall  Electronics devices  Oxygen pressure  Phase-field simulation  Theoretical simulation  Vacancy Defects