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InP-based InAs/InGaAs quantum wells with type-I emission beyond 3 mu m 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 8, 页码: 81914
Gu, Y; Zhang, YG(重点实验室); Wang, K; Fang, X; Li, C; Cao, YY; Li, AZ; Li, YY
收藏  |  浏览/下载:13/0  |  提交时间:2013/05/10
InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 mu m 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: 77304
Gu, Y; Wang, K; Li, YY; Li, C; Zhang, YG(重点实验室)
收藏  |  浏览/下载:14/0  |  提交时间:2013/05/10
Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 7, 页码: 77808
Gu, Y; Zhang, YG(重点实验室); Li, AZ; Wang, K; Li, C; Li, YY
收藏  |  浏览/下载:11/0  |  提交时间:2013/05/10


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