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Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 13
作者:  Wu Xue;  Lu Wu;  Wang Xin;  Xi Shan-Bin;  Guo Qi
收藏  |  浏览/下载:23/0  |  提交时间:2013/11/07
3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: -
作者:  Zhang Jin-Xin;  Guo Hong-Xia;  Guo Qi;  Wen Lin;  Cui Jiang-Wei
收藏  |  浏览/下载:29/0  |  提交时间:2013/11/07
Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors 期刊论文
CHINESE PHYSICS C, 2011, 卷号: 35, 期号: 2, 页码: 169-173
作者:  Lu Wu;  Zheng Yu-Zhan;  Wang Yi-Yuan;  Ren Di-Yuan;  Guo Qi
收藏  |  浏览/下载:12/0  |  提交时间:2012/11/29
Degradation and dose rate effects of bipolar linear regulator on ionizing radiation 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 9, 页码: -
作者:  Wang Yi-Yuan;  Lu Wu;  Ren Di-Yuan;  Guo Qi;  Yu Xue-Feng
收藏  |  浏览/下载:17/0  |  提交时间:2012/11/29
Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 8, 页码: 5572-5577
作者:  Zheng Yu-Zhan;  Lu Wu;  Ren Di-Yuan;  Wang Yi-Yuan;  Guo Qi
收藏  |  浏览/下载:18/0  |  提交时间:2012/11/29
ELDRS and dose-rate dependence of vertical NPN transistor 期刊论文
CHINESE PHYSICS C, 2009, 卷号: 33, 期号: 1, 页码: 47-49
作者:  Zheng Yu-Zhan;  Lu Wu;  Ren Di-Yuan;  Wang Gai-Li;  Yu Xue-Feng
收藏  |  浏览/下载:10/0  |  提交时间:2012/11/29


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