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| Sol-gel synthesis of Y2O3-doped ZnO thin films varistors and their electrical properties 期刊论文
transactions of nonferrous metals society of china, 2012, 卷号: 22, 页码: s110-s114
Xu D (Xu Dong); Jiang B (Jiang Bin); Jiao L (Jiao Lei); Cui FD (Cui Feng-dan); Xu HX (Xu Hong-xing); Yang YT (Yang Yong-tao); Yu RH (Yu Ren-hong); Cheng XN (Cheng Xiao-nong)
  收藏 | 浏览/下载：16/0 | 提交时间：2013/03/26 |
| Microstructure and electrical properties of sol-gel derived Ni-doped CaCu3Ti4O12 ceramics 期刊论文
transactions of nonferrous metals society of china, 2012, 卷号: 22, 页码: s127-s132
Zhang CH (Zhang Cheng-hua); Zhang K (Zhang Ke); Xu HX (Xu Hong-xing); Song Q (Song Qi); Yang YT (Yang Yong-tao); Yu RH (Yu Ren-hong); Xu D (Xu Dong); Cheng XN (Cheng Xiao-nong)
收藏 | 浏览/下载：16/0 | 提交时间：2013/03/26 |
| An evidence of defect gettering in GaN 期刊论文
physica b-condensed matter, 2008, 卷号: 403, 期号: 13-16, 页码: 2495-2499
Majid A; Ali A; Zhu JJ; Wang YT; Yang H
收藏 | 浏览/下载：54/7 | 提交时间：2010/03/08
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| Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626
作者: Zhang SM
收藏 | 浏览/下载：252/65 | 提交时间：2010/08/12
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| Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者: Zhang SM
收藏 | 浏览/下载：230/30 | 提交时间：2010/08/12
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| Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13
Shen XM; Feng G; Zhang BS; Duan LH; Wang YT; Yang H
收藏 | 浏览/下载：38/0 | 提交时间：2010/08/12
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| High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
作者: Zhao DG
收藏 | 浏览/下载：61/0 | 提交时间：2010/08/12
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| Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者: Zhao DG
收藏 | 浏览/下载：300/12 | 提交时间：2010/08/12
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| Method for measurement of lattice parameter of cubic GaN layers on GaAs (001) 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 345-348
Zheng XH; Wang YT; Feng ZH; Yang H; Chen H; Zhou JM; Liang JW
收藏 | 浏览/下载：39/0 | 提交时间：2010/08/12
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| Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者: Zhang SM
收藏 | 浏览/下载：293/3 | 提交时间：2010/08/12
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