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Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells 期刊论文
nanoscale research letters, 2012, 卷号: 7, 页码: 605
Lv XQ (Lv, Xue-Qin); Zhang JY (Zhang, Jiang-Yong); Ying LY (Ying, Lei-Ying); Liu WJ (Liu, Wen-Jie); Hu XL (Hu, Xiao-Long); Zhang BP (Zhang, Bao-Ping); Qui ZR (Qui, Zhi-Ren); Kuboya S (Kuboya, Shigeyuki); Onabe K (Onabe, Kentaro)
收藏  |  浏览/下载:17/0  |  提交时间:2013/03/26
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  Wang C
收藏  |  浏览/下载:69/3  |  提交时间:2011/07/05
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM
收藏  |  浏览/下载:44/0  |  提交时间:2010/03/08
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929
Wang, XL; Chen, TS; Xiao, HL; Wang, CM; Hu, GX; Luo, WJ; Tang, J; Guo, LC; Li, JM
收藏  |  浏览/下载:77/1  |  提交时间:2010/03/08
Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708
Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min)
收藏  |  浏览/下载:70/0  |  提交时间:2010/03/29


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