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浏览/检索结果: 共15条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.602110 作者:  Han XX;  Wei HY 收藏  |  浏览/下载：710/6  |  提交时间：2010/04/11 P-TYPE CONDUCTION  THIN-FILMS  OHMIC CONTACTS   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS   Aluminium doping induced enhancement of p-d coupling in ZnO 期刊论文 journal of physics-condensed matter, 2006, 卷号: 18, 期号: 11, 页码: 3081-3087 作者:  Han XX;  Wei HY 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 ELECTRONIC-STRUCTURE CALCULATIONS  II-VI SEMICONDUCTORS  THIN-FILMS  PHOTOELECTRON-SPECTROSCOPY  DOPED ZNO  1ST-PRINCIPLES  CONDUCTION  STATES   Intersubband optical absorption in quantum dots-in-a-well heterostructures 期刊论文 journal of applied physics, 2005, 卷号: 98, 期号: 5, 页码: art.no.053703 Han, XX; Li, JM; Wu, JJ; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：112/42  |  提交时间：2010/03/17 INFRARED PHOTODETECTORS   Theoretical investigation of intersubband transition in AlxGa1-xN/GaN/AlyGa1-yN step quantum well 期刊论文 physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 4, 页码: 453-461 Li, JM; Lu, YW; Han, XX; Wu, JJ; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：200/76  |  提交时间：2010/03/17 quantum wells   Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure 期刊论文 physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 3, 页码: 230-236 Han, XX; Li, JM; Wu, JJ; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：39/16  |  提交时间：2010/03/17 two-dimensional electron gas   Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots 期刊论文 vacuum, 2005, 卷号: 77, 期号: 3, 页码: 307-314 Han, XX; Li, JM; Wu, JJ; Wang, XH; Li, DB; Liu, XL; Han, PD; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/17 nanostructure   A model for scattering due to interface roughness in finite quantum wells 期刊论文 semiconductor science and technology, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212 作者:  Han XX 收藏  |  浏览/下载：60/0  |  提交时间：2010/04/11 SINGLE-PARTICLE  ELECTRON-GAS  MOBILITY  GAAS  DISORDER   Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure 期刊论文 chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2096-2099 Han, XX; Wu, JJ; Li, JM; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：45/17  |  提交时间：2010/03/17 DISLOCATION SCATTERING   Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340 作者:  Li DB;  Wei HY;  Han XX 收藏  |  浏览/下载：59/22  |  提交时间：2010/03/17 cracks