Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

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	Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition
	Li DB; Wei HY; Han XX
刊名	journal of crystal growth
	2005
卷号	279 期号:3-4 页码:335-340
关键词	cracks
ISSN号	0022-0248
通讯作者	wu, jj, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jiejunw@red.semi.ac.cn
中文摘要	a new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting inalgan interlayers during the growth of gan upon si (1 1 1) substrate. compared with gan film without quaternary interlayer, gan layer grown on inalgan compliant layers shows a five times brighter integrated pl intensity and a (0 0 0 2) high-resolution x-ray diffraction (hrxrd) curve width of 18 arcmin. its chi(min), derived from rutherford backscattering spectrometry (rbs), is about 2.0%, which means that the crystalline quality of this layer is very good. quaternary inalgan layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of gan epitaxy. the mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak in-n bond make interlayer to offer tenability in the lattice parameters and release the thermal stress. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8690]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DB,Wei HY,Han XX. Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition[J]. journal of crystal growth,2005,279(3-4):335-340.
APA	Li DB,Wei HY,&Han XX.(2005).Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition.journal of crystal growth,279(3-4),335-340.
MLA	Li DB,et al."Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition".journal of crystal growth 279.3-4(2005):335-340.