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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The Growth and Fabrication of InGaN_GaN Multi-Quantum Well Solar Cells on Si(111) Substrates 期刊论文 chinese physics letters, 2013, 卷号: 30, 期号: 6, 页码: 068402 LI Zhi-Dong, XIAO Hong-Ling, WANG Xiao-Liang, WANG Cui-Mei, DENG Qing-Wen, JING Liang, DING Jie-Qin, WANG Zhan-Guo, HOU Xun 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/17 Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文 physica b: condensed matter, 2013, 卷号: 414, 页码: 110-114 Li, Zhidong; Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Jing, Liang; Ding, Jieqin; Hou, Xun 收藏  |  浏览/下载：13/0  |  提交时间：2014/04/28 Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate 期刊论文 journal of semiconductors, 2013, 卷号: 34, 期号: 12, 页码: 124004 Jing, Liang; Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Li, Zhidong; Ding, Jieqin; Wang, Zhanguo; Hou, Xun 收藏  |  浏览/下载：17/0  |  提交时间：2014/04/28 The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy 期刊论文 chinese physics letters, 2013, 卷号: 30, 期号: 5, 页码: 7101 WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong 收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18 Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文 physica b-condensed matter, 2013, 卷号: 414, 页码: 110-114 Li, Zhidong; Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Jing, Liang; Ding, Jieqin 收藏  |  浏览/下载：19/0  |  提交时间：2013/09/17 The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD 期刊论文 journal of semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 113002 Liang, Jing; Hongling, Xiao; Xiaoliang, Wang; Cuimei, Wang; Qingwen, Deng; Zhidong, Li; Jieqin, Ding; Zhanguo, Wang; Xun, Hou 收藏  |  浏览/下载：15/0  |  提交时间：2014/04/30 Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文 ieee international conference on group iv photonics gfp, 2011, 卷号: 32, 期号: 11, 页码: 114007 Li, Zhicong; Li, Panpan; Wang, Bing; Li, Hongjian; Liang, Meng; Yao, Ran; Li, Jing; Deng, Yuanming; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin 收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Diodes  Electrostatic devices  Electrostatic discharge  Gallium alloys  Gallium nitride  Light emission   Growth of GaAs on Si by using a thin Si film as buffer layer 期刊论文 chinese physics letters, 1996, 卷号: 13, 期号: 1, 页码: 42-45 Hao MS; Liang JW; Jing XJ; Wang YT; Deng LS; Xiao ZB; Zheng LX; Hu XW 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/17 MOLECULAR-BEAM EPITAXY  ON-SI