The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD

	The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD
	Liang, Jing ; Hongling, Xiao ; Xiaoliang, Wang ; Cuimei, Wang ; Qingwen, Deng ; Zhidong, Li ; Jieqin, Ding ; Zhanguo, Wang ; Xun, Hou
刊名	journal of semiconductors
	2013
卷号	34 期号:11 页码:113002
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2014-04-30
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24868]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Liang, Jing,Hongling, Xiao,Xiaoliang, Wang,et al. The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD[J]. journal of semiconductors,2013,34(11):113002.
APA	Liang, Jing.,Hongling, Xiao.,Xiaoliang, Wang.,Cuimei, Wang.,Qingwen, Deng.,...&Xun, Hou.(2013).The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD.journal of semiconductors,34(11),113002.
MLA	Liang, Jing,et al."The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD".journal of semiconductors 34.11(2013):113002.