QQ客服 官方微博 反馈留言

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文 nanoscale research letters, 2012, 卷号: 7, 页码: 600 Zhang HY (Zhang, Hongyi); Chen YH (Chen, Yonghai); Zhou GY (Zhou, Guanyu); Tang CG (Tang, Chenguang); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/26 Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY 收藏  |  浏览/下载：54/5  |  提交时间：2011/07/05 SELF-ORGANIZED ISLANDS  MOLECULAR-BEAM-EPITAXY  OPTICAL-PROPERTIES  SURFACES  EMISSION  DENSITY  SIZE   Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501 作者:  Zhou GY;  Zhang HY;  Xu B;  Ye XL 收藏  |  浏览/下载：68/4  |  提交时间：2011/07/05 INAS ISLANDS  MU-M  ESCAPE  GAAS  GAAS(100)  SUBSTRATE   The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914 作者:  Jin P;  Ye XL;  Zhou XL 收藏  |  浏览/下载：52/4  |  提交时间：2011/07/05 SPECTROSCOPY   The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513 Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：13/0  |  提交时间：2010/12/05 QUANTUM-DOT SYSTEM  ISLAND FORMATION  IN-SITU  EVOLUTION  GAAS  PHOTOLUMINESCENCE   Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Jia CH (Jia C. H.); Zhou GY (Zhou G. Y.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：336/26  |  提交时间：2010/08/17 CARRIER RELAXATION  STATES  SUPERLATTICES  CONFINEMENT  LASER   Different growth mechanisms of bimodal In As/GaAs QDs 期刊论文 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 308-311 作者:  Ye XL;  Zhou XL 收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05 INAS QUANTUM DOTS  GAAS(001)  RELAXATION  TRANSITION  GAAS   Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in AlXGa1-XN/GaN heterostructures 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 7, 页码: art.no.071920 Tang YQ; Shen B; He XW; Han K; Tang N; Chen WH; Yang ZJ; Zhang GY; Chen YH; Tang CG; Wang ZG; Cho KS; Chen YF 收藏  |  浏览/下载：65/0  |  提交时间：2010/03/29 POLARIZATION   Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 7, 页码: art.no.071912 He XW; Shen B; Tang YQ; Tang N; Yin CM; Xu FJ; Yang ZJ; Zhang GY; Chen YH; Tang CG; Wang ZG 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 QUANTUM-WELLS