Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain
	He XW ; Shen B ; Tang YQ ; Tang N ; Yin CM ; Xu FJ ; Yang ZJ ; Zhang GY ; Chen YH ; Tang CG ; Wang ZG
刊名	applied physics letters
	2007
卷号	91 期号:7 页码:art.no.071912
关键词	QUANTUM-WELLS
ISSN号	issn: 0003-6951
通讯作者	he, xw, peking univ, sch phys, state key lab artificial microstruct & mesoscop p, beijing 100871, peoples r china. 电子邮箱地址: bshen@pku.edu.cn ; yhchen@red.semi.ac.cn
中文摘要	the circular photogalvanic effect (cpge) of the two-dimensional electron gas (2deg) in al0.25ga0.75n/gan heterostructures induced by infrared radiation has been investigated under uniaxial strain. the observed photocurrent consists of the superposition of the cpge and the linear photogalvanic effect currents, both of which are up to 10(-2) na. the amplitude of the cpge current increases linearly with additional strain and is enhanced by 18.6% with a strain of 2.2x10(-3). based on the experimental results, the contribution of bulk-inversion asymmetry (bia) and structure-inversion asymmetry (sia) spin splitting of the 2deg to the cpge current in the heterostructures is separated, and the ratio of sia and bia terms is estimated to be about 13.2, indicating that the sia is the dominant mechanism to induce the k-linear spin splitting of the subbands in the triangular quantum well at alxga1-xn/gan heterointerfaces. (c) 2007 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9302]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	He XW,Shen B,Tang YQ,et al. Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain[J]. applied physics letters,2007,91(7):art.no.071912.
APA	He XW.,Shen B.,Tang YQ.,Tang N.,Yin CM.,...&Wang ZG.(2007).Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain.applied physics letters,91(7),art.no.071912.
MLA	He XW,et al."Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain".applied physics letters 91.7(2007):art.no.071912.