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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth and photoluminescence of InAlGaN films 会议论文 5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003 作者:  Li DB 收藏  |  浏览/下载：13/2  |  提交时间：2010/10/29 MULTIPLE-QUANTUM WELLS  QUATERNARY ALLOYS  OPTICAL-PROPERTIES   Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 annealing  molecular beam epitaxy  germanium silicon alloys  semiconducting materials  STRAIN RELAXATION   Experimental study on tunable external cavity photodetectors 会议论文 international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999 Ren XM; Liu K; Huang YQ; Liu LY; Li JX; Guo W; Liao QW; Ma XY; Kang XJ; Campbell JC 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 external cavity photodetector  tunable photodetector  optoelectronic device  WAVELENGTH   Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy 会议论文 9th international symposium on nondestructive characterization of materials, sydney, australia, jun 28-jul 02, 1999 Liu JP; Kong MY; Huang DD; Li JP; Sun DZ 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29 STRAIN-SHIFT COEFFICIENTS  SI1-XGEX  SILICON  PHONONS   Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 THREADING DISLOCATION  SI(100)  LAYERS  FILMS   Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Liu JP; Kong MY; Liu XF; Li JP; Huang DD; Li LX; Sun DZ 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 STRANSKI-KRASTANOW GROWTH  QUANTUM DOTS  RELAXATION  INAS