Growth and photoluminescence of InAlGaN films

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	Growth and photoluminescence of InAlGaN films
	Li DB
	2003
会议名称	5th international conference on nitride semiconductors (icns-5)
会议日期	may 25-30, 2003
会议地点	nara, japan
关键词	MULTIPLE-QUANTUM WELLS QUATERNARY ALLOYS OPTICAL-PROPERTIES
页码	2001-2005
通讯作者	li db chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china.
中文摘要	two quaternary inalgan films were grown by metal-organic chemical-vapor deposition (mocvd) on sapphire (0001) substrates with and without high-temperature gan interlayer, respectively. the structural and optical properties of the quaternary films were investigated by high-resolution x-ray diffraction (hrxrd), high-resolution electron microscopy (hrem), temperature-dependent photoluminescence (pl) spectroscopy and time-resolved photoluminescence (trpl) spectroscopy. according to the hrxrd and pl results, it is demonstrated that two samples have the same crystal quality. the trpl signals of both samples were fitted well as a stretched exponential decay from 14 k to 250 k, indicating significant disorder in the materials, which is attributed to recombination of excitons localized in disorder quantum nanostructures such as quantum dots or quantum disks originating from indium (in) clusters or in composition fluctuation. the cross-section hrem measurement further proves that there exist disorder quantum nanostructures in the quaternary. by investigating the temperature dependence of the dispersive exponent beta, it is shown that the stretched exponential decays of the two samples originate from different mechanisms. (c) 2003 wiley-vch verlag gmbh & co. kgaa, weinheim.
英文摘要	two quaternary inalgan films were grown by metal-organic chemical-vapor deposition (mocvd) on sapphire (0001) substrates with and without high-temperature gan interlayer, respectively. the structural and optical properties of the quaternary films were investigated by high-resolution x-ray diffraction (hrxrd), high-resolution electron microscopy (hrem), temperature-dependent photoluminescence (pl) spectroscopy and time-resolved photoluminescence (trpl) spectroscopy. according to the hrxrd and pl results, it is demonstrated that two samples have the same crystal quality. the trpl signals of both samples were fitted well as a stretched exponential decay from 14 k to 250 k, indicating significant disorder in the materials, which is attributed to recombination of excitons localized in disorder quantum nanostructures such as quantum dots or quantum disks originating from indium (in) clusters or in composition fluctuation. the cross-section hrem measurement further proves that there exist disorder quantum nanostructures in the quaternary. by investigating the temperature dependence of the dispersive exponent beta, it is shown that the stretched exponential decays of the two samples originate from different mechanisms. (c) 2003 wiley-vch verlag gmbh & co. kgaa, weinheim.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:15z (gmt). no. of bitstreams: 1 2764.pdf: 77736 bytes, checksum: ab42d44863a97a0e911e197f250a2a1e (md5) previous issue date: 2003; japan soc appl phys.; japan soc promot sci, 162nd comm wide bandgap semiconductor photon & elect devices.; japan assoc crystal growth.; elect soc.; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	japan soc appl phys.; japan soc promot sci, 162nd comm wide bandgap semiconductor photon & elect devices.; japan assoc crystal growth.; elect soc.
会议录	5th international conference on nitride semiconductors (icns-5), proceedings
会议录出版者	wiley-vch, inc ; 605 third ave, new york, ny 10158-0012 usa
会议录出版地	605 third ave, new york, ny 10158-0012 usa
学科主题	半导体材料
语种	英语
ISBN号	3-527-40489-9
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13561]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DB. Growth and photoluminescence of InAlGaN films[C]. 见:5th international conference on nitride semiconductors (icns-5). nara, japan. may 25-30, 2003.