已选(0)清除
条数/页: 排序方式:
|
| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文 Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466 作者: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN 收藏  |  浏览/下载:20/0  |  提交时间:2018/07/11 |
| Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure 期刊论文 journal of alloys and compounds, 2016, 卷号: 670, 页码: 258-261 Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li 收藏  |  浏览/下载:12/0  |  提交时间:2017/03/10 |
| Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文 superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225 Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du 收藏  |  浏览/下载:29/0  |  提交时间:2017/03/10 |
| XPS study of impurities in Si-doped AlN film 期刊论文 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:29/0  |  提交时间:2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10 |
| A human-machine interface based on single channel EOG and patchable sensor 期刊论文 biomedical signal processing and control, 2016, 卷号: 30, 页码: 98–105 Xuhong Guo; Weihua Pei; Yijun Wang; Yuanfang Chen; He Zhang; Xian Wu; Xiaowei Yang; Hongda Chen; Yuanyuan Liu; Ruicong Liu 收藏  |  浏览/下载:24/0  |  提交时间:2017/03/16 |
| Fabrication of iridium oxide neural electrodes at the wafer level 期刊论文 science china technological sciences, 2016, 卷号: 59, 期号: 9, 页码: 1399-1406 ZHANG He; PEI WeiHua; ZHAO ShanShan; YANG XiaoWei; LIU RuiCong; LIU YuanYuan; WU Xian; GUO DongMei; GUI Qiang; GUO XuHong; XING Xiao; WANG YiJun; CHEN HongDa 收藏  |  浏览/下载:17/0  |  提交时间:2017/03/16 |
| Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films 期刊论文 chinese physics b, 2016, 卷号: 25, 期号: 2, 页码: 027102 Jing Yang; De-Gang Zhao; De-Sheng Jiang; Ping Chen; Zong-Shun Liu; Jian-Jun Zhu; Ling-Cong Le; Xiao-Jing Li; Xiao-Guang He; Li-Qun Zhang; Hui Yang 收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10 |
| Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 4, 页码: 041211 Xiang Li; Zongshun Liu; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Jing Yang; Lingcong Le; Wei Liu; Xiaoguang He; Xiaojing Li; Feng Liang 收藏  |  浏览/下载:18/0  |  提交时间:2017/03/10 |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 applied physics a, 2016, 卷号: 122, 期号: 9 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:14/0  |  提交时间:2017/03/10 |