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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2021     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Calibration of the air shower energy scale of the water and air Cherenkov techniques in the LHAASO experiment 期刊论文 PHYSICAL REVIEW D, 2021, 卷号: 104, 期号: 6 作者:  Aharonian, F.;  An, Q.;  Axikegu;  Bai, L. X.;  Bai, Y. X. 收藏  |  浏览/下载：121/0  |  提交时间：2021/10/08 Ultrahigh-energy photons up to 1.4 petaelectronvolts from 12 γ-ray Galactic sources 期刊论文 Nature, 2021, 卷号: 594, 期号: 7861, 页码: 33-36 作者:  Cao, Zhen;  Aharonian, F. A.;  An, Q.;  Axikegu;  Bai, L. X. 收藏  |  浏览/下载：160/0  |  提交时间：2021/07/17 Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors 期刊论文 CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184 作者:  Liu, BK (Liu Bingkai)[ 1,2,3 ];  Li, YD (Li Yudong)[ 1,2 ];  Wen, L (Wen Lin)[ 1,2 ];  Zhou, D (Zhou Dong)[ 1,2 ];  Feng, J (Feng Jie)[ 1,2 ] 收藏  |  浏览/下载：32/0  |  提交时间：2021/05/10 Backside‐  illuminated CMOS image sensors  Dark signal behaviors  Displacement damage effects  Neutron irradiation   Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429 作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3] 收藏  |  浏览/下载：41/0  |  提交时间：2022/03/24 SiC Power MOSFETs  Switching Characteristics  Total Ionizing Dose (TID) Effect  Static Characteristic  Parasitic Capacitance   TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570 作者:  Ren, ZX (Ren, Zhexuan);  1An, X (An, Xia) 1;  Li, GS (Li, Gensong) 1;  Liu, JY (Liu, Jingyi) 1;  Xun, MZ (Xun, Mingzhu) 2 收藏  |  浏览/下载：36/0  |  提交时间：2021/09/22 65 nmhot-carrier injection (HCI)layout-dependent effect (LDE)nMOSstressthreshold voltagetotal ionizing dose (TID)