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| Formulation of Al-Bi-Sn immiscible alloys versus the solidification behaviors and structures 期刊论文
JOURNAL OF MATERIALS SCIENCE, 2019, 卷号: 54, 期号: 5, 页码: 4384-4399
作者: Jia, Peng; Li, Yue; Hu, Xun; Zhang, Jinyang; Teng, Xinying
  收藏 | 浏览/下载：4/0 | 提交时间：2019/12/11 |
| Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells 期刊论文
Materials Research Express, 2019, 卷号: 6, 页码: 076203
作者: Wei Liu ; Feng Liang ; Degang Zhao ; Jing Yang ; Desheng Jiang ; Jianjun Zhu ; Zongshun Liu
收藏 | 浏览/下载：3/0 | 提交时间：2020/07/31 |
| Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 页码: 280
作者: Shuangtao Liu; Jing Yang; Degang Zhao; Desheng Jiang; Jianjun Zhu; Feng Liang; Ping Chen; Zongshun Liu; Yao Xing; Liyuan Peng
收藏 | 浏览/下载：7/0 | 提交时间：2020/07/31 |
| Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence 期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: 14, 页码: 88
作者: Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Feng Liang ; Shuangtao Liu ; Liqun Zhang
收藏 | 浏览/下载：6/0 | 提交时间：2020/08/05 |
| Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 806, 页码: 1077-1080
作者: Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang
收藏 | 浏览/下载：8/0 | 提交时间：2020/08/04 |
| Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-In x Ga 1-x N lower waveguide 期刊论文
Superlattices and Microstructures, 2019, 卷号: 132, 页码: 106153
作者: Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Shuangtao Liu ; Yao Xing ; Liqun Zhang
收藏 | 浏览/下载：7/0 | 提交时间：2020/07/31 |
| Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells 期刊论文
Optical Materials Express, 2019, 卷号: 9, 期号: 10, 页码: 3941-3951
作者: FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG
收藏 | 浏览/下载：4/0 | 提交时间：2020/07/31 |
| Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices 期刊论文
Journal of Materials Science: Materials in Electronics, 2019, 卷号: 30, 期号: 4, 页码: 3277-3282
作者: Gaoqiang Deng; Yuantao Zhang; Pengchong Li ; Ye Yu ; Xu Han ; Liang Chen ; Long Yan ; Xin Dong ; Degang Zhao; Guotong Du
收藏 | 浏览/下载：2/0 | 提交时间：2020/08/04 |
| Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 790, 页码: 197-202
作者: Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Wenjie Wang
收藏 | 浏览/下载：4/0 | 提交时间：2020/08/05 |
| Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact 期刊论文
Coatings, 2019, 卷号: 9, 页码: 291
作者: Wenjie Wang ; Wuze Xie ; Zejia Deng ; Haojun Yang ; Mingle Liao ; Junze Li ; Xiaojia Luo ; Song Sun ; Degang Zhao
收藏 | 浏览/下载：6/0 | 提交时间：2020/07/31 |
