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浏览/检索结果: 共14条，第1-10条 帮助 限定条件 发表日期：2011    学科主题：半导体材料    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文 nanoscale research letters, 2011, 卷号: 6, 页码: article no.69 作者:  Song HP;  Wei HY;  Li CM;  Jiao CM 收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05 CATHODOLUMINESCENCE CHARACTERIZATION  GALLIUM NITRIDE  STRESSES  LAYERS  HETEROSTRUCTURE  DEPOSITION  CONSTANTS  MECHANISM  SAPPHIRE  STRAIN   Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文 journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705 Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG 收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06 FIELD-EFFECT TRANSISTORS  INTERFACE ROUGHNESS  QUANTUM-WELLS  MOBILITY  HETEROJUNCTION  TRANSPORT  MODEL   Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions 期刊论文 journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11 s1, 页码: 9368-9383 Zhu QS (Zhu Qinsheng); Wu J (Wu Ju); Li CM (Li Chengming); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/22 Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文 applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112 作者:  Shi K;  Jiao CM;  Song HP 收藏  |  浏览/下载：94/7  |  提交时间：2011/07/05 Valence band offset  GaN/diamond heterojunction  XPS  Conduction band offset  CHEMICAL-VAPOR-DEPOSITION  ALGAN/GAN HEMTS  DIAMOND  GAN  FILMS   A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure 期刊论文 ieee transactions on electron devices, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275 Liu GP (Liu Guipeng); Wu J (Wu Ju); Lu YW (Lu Yanwu); Zhang BA (Zhang Biao); Li CM (Li Chengming); Sang L (Sang Ling); Song YF (Song Yafeng); Shi K (Shi Kai); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：11/0  |  提交时间：2012/02/22 Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 44, 页码: 445306 Deng, QW; Wang, XL; Xiao, HL; Wang, CM; Yin, HB; Chen, H; Lin, DF; Li, JM; Wang, ZG; Hou, X 收藏  |  浏览/下载：17/0  |  提交时间：2012/01/06 QUANTUM DOTS  SOLAR-CELLS  GROWTH  FILMS  GAN   Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X 收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06 LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  BAND-GAP  MG  PHOTOLUMINESCENCE  INGAN  DEPENDENCE  STRAIN  ENERGY  INN   An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: art. no. 265103 作者:  Yin HB;  Lin DF;  Hou QF;  Deng QW 收藏  |  浏览/下载：36/2  |  提交时间：2011/07/07 FUNDAMENTAL-BAND GAP  PHASE-SEPARATION  EFFICIENCY  INN  EMISSION  LAYERS  MODEL   Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.18401 作者:  Deng QW;  Hou QF;  Bi Y;  Yin HB 收藏  |  浏览/下载：42/5  |  提交时间：2011/07/05 EFFICIENCY   Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104 作者:  Deng QW 收藏  |  浏览/下载：47/5  |  提交时间：2011/07/05 QUANTUM-WELL-STRUCTURE  ALGAN/GAN HETEROSTRUCTURE  YELLOW LUMINESCENCE  DEEP LEVELS  TRAP  PERFORMANCE  FREQUENCY  EPILAYERS  ORIGIN  DIODES